ATF38143 Agilent(Hewlett-Packard), ATF38143 Datasheet - Page 2

• Manufacturer Part Number: ATF38143
• Description: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package
• Manufacturer: Agilent(Hewlett-Packard)

ATF-38143 Absolute Maximum Ratings
Note:
Distribution data sample size is 450
samples taken from 6 different wafers.
Future wafers allocated to this product
may have nominal values anywhere within
the upper and lower spec limits.
Product Consistency Distribution Charts
Figure 1. Typical I-V Curves.
(V
250
200
150
100
Symbol
180
150
120
Figure 3. NF @ 2 GHz, 2 V, 10 mA.
LSL=0, Nominal=0.44, USL=0.85
50
90
60
30
P
GS
0
0
T
P
0.1
T
V
V
in max
V
I
0
= -0.2 V per step)
STG
DS
diss
GD
DS
GS
CH
jc
0.2
1
-3 Std
0.3
0.4 0.5
Drain - Source Voltage
Gate - Source Voltage
Gate Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
2
V
NF (dB)
DS
(V)
+3 Std
3
0.6
Parameter
+0.6 V
–0.6 V
0 V
0.7 0.8
4
0.9
5
Cpk = 4.08938
Stdev = 0.03 dB
6 Wafers
Sample Size = 450
[3]
Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production test
requirements. Circuit losses have been de-
embedded from actual measurements.
[2]
[2]
Units
dBm
mW
mA
C/W
V
V
V
C
C
300
250
200
150
100
160
120
[1]
Figure 2. OIP3 @ 2 GHz, 2 V, 10 mA.
LSL=18.5, Nominal=21.99, USL=26.0
Figure 4. Gain @ 2 GHz, 2 V, 10 mA.
LSL=15.0, Nominal=16.06, USL= 18.0
50
80
40
0
0
18
15
2
15.5
-3 Std
-3 Std
Maximum
Absolute
-65 to 160
20
580
160
165
I
4.5
17
-4
-4
dss
16
GAIN (dB)
OIP3 (dB)
+3 Std
16.5
22
17
+3 Std
24
Notes:
1. Operation of this device above any one
2. Source lead temperature is 25 C.
3. Thermal resistance measured using
17.5
of these parameters may cause
permanent damage.
Derate 6 mW/ C for T
150 C Liquid Crystal Measurement
method.
26
18
Cpk = 2.58097
Stdev = 0.14 dB
6 Wafers
Sample Size = 450
Cpk = 1.59062
Stdev = 0.73 dBm
6 Wafers
Sample Size = 450
L
> 64 C.