ATF36077 Agilent(Hewlett-Packard), ATF36077 Datasheet - Page 2

• Manufacturer Part Number: ATF36077
• Description: 2-18 GHz Ultra Low Noise Pseudomorphic HEMT
• Manufacturer: Agilent(Hewlett-Packard)

ATF-36077 Absolute Maximum Ratings
ATF-36077 Electrical Specifications,
T
Note:
1. Measured in a fixed tuned environment with source = 0.54 at 156 ; load = 0.48 at 167 .
ATF-36077 Characterization Information,
T
Note:
2. See noise parameter table.
C
C
Symbol
V
Symbol
Symbol
= 25 C, Z
= 25 C, Z
GS 10 mA
S
P
P
V
T
NF
G
12 off
V
in max
V
V
NF
I
p 10 %
T
1dB
G
g
P
I
STG
dss
DS
GS
GD
A
D
ch
m
T
A
O
O
Noise Figure (Tuned Circuit)
Gain at Noise Figure (Tuned Circuit)
Reverse Isolation
Output Power at 1 dB Gain Compression
Gate to Source Voltage for I
= 50
= 50
Drain – Source Voltage
Gate – Source Voltage
Gate-Drain Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Noise Figure
Gain at NF
Transconductance
Saturated Drain Current
Pinch-off Voltage
,
,
Parameter
V
V
Parameters and Test Conditions
ds
ds
= 1.5 V, I
= 1.5 V, I
[1]
[1]
Parameters and Test Conditions
ds
ds
= 10 mA, (unless otherwise noted).
= 10 mA, (unless otherwise noted).
[3]
DS
= 10 mA
V
DS
Units
dBm
mW
mA
= 1.5 V, I
V
V
V
C
C
V
V
DS
DS
5-76
= 1.5 V, V
= 1.5 V, V
DS
Maximum
f = 12 GHz, V
Absolute
-65 to 150
= 10% of I
f = 12.0 GHz
f = 12.0 GHz
+10
-3.5
180
150
I
+ 3
-3
dss
GS
GS
= 0 V
= 0 V
[1]
dss
DS
= 1.5 V, V
Units
Notes:
1. Operation of this device above any one
2. Measured at P
3. Derate at 16.7 mW/ C for T
mA
mS
dB
dB
V
of these parameters may cause
permanent damage.
T
Thermal Resistance
ch
V
f = 12 GHz
f = 12 GHz
f = 12 GHz
DS
= 100 C.
f = 4 GHz
f = 4 GHz
f = 4 GHz
ch-c
GS
= 1.5 V
= -2 V
= 60 C/W
Min.
11.0
-1.0
50
15
diss
= 15 mW and
Units
Typ.
-0.35
dBm
dBm
12.0
0.5
dB
dB
dB
dB
dB
55
25
V
C
[2,3]
> 139 C.
Max.
:
-0.15
Typ.
0.3
-0.2
0.6
0.5
45
17
12
14
5
5
[2]