MT16LSDT3264 Micron, MT16LSDT3264 Datasheet - Page 20

• Manufacturer Part Number: MT16LSDT3264
• Description: 168-Pin SDRAM DIMMs (x64)
• Manufacturer: Micron

SERIAL PRESENCE-DETECT MATRIX
(Note: 1) (V
NOTE: 1. “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW.”
16, 32 Meg x 64 SDRAM DIMMs
SD8_16C16_32X64AG_C.p65 – Rev. C, Pub. 9/01
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
0
1
2
3
4
5
6
7
8
9
NUMBER OF BYTES USED BY MICRON
TOTAL NUMBER OF SPD MEMORY BYTES
MEMORY TYPE
NUMBER OF ROW ADDRESSES
NUMBER OF COLUMN ADDRESSES
NUMBER OF MODULE BANKS
MODULE DATA WIDTH
MODULE DATA WIDTH (continued)
MODULE VOLTAGE INTERFACE LEVELS
SDRAM CYCLE TIME,
(CAS LATENCY = 3)
SDRAM ACCESS FROM CLK,
(CAS LATENCY = 3)
MODULE CONFIGURATION TYPE
REFRESH RATE/TYPE
SDRAM WIDTH (PRIMARY SDRAM)
ERROR-CHECKING SDRAM DATA WIDTH
MINIMUM CLOCK DELAY FROM BACK-TO-BACK
RANDOM COLUMN ADDRESSES,
BURST LENGTHS SUPPORTED
NUMBER OF BANKS ON SDRAM DEVICE
CAS LATENCIES SUPPORTED
CS LATENCY
WE LATENCY
SDRAM MODULE ATTRIBUTES
SDRAM DEVICE ATTRIBUTES: GENERAL
SDRAM CYCLE TIME ,
(CAS LATENCY = 2)
SDRAM ACCESS FROM CLK,
(CAS LATENCY = 2)
SDRAM CYCLE TIME,
(CAS LATENCY = 1)
SDRAM ACCESS FROM CLK,
(CAS LATENCY = 1)
MINIMUM ROW PRECHARGE TIME,
MINIMUM ROW ACTIVE TO ROW ACTIVE,
MINIMUM RAS# TO CAS# DELAY,
DD
= +3.3V ±0.3V)
DESCRIPTION
t
t
CK
t
CK
CK
t
t
t
AC
AC
AC
t
CCD
t
RCD
t
RP
t
RRD
ENTRY (VERSION)
1, 2, 4, 8, PAGE
5.4 (-13E/-133)
15.625µs/SELF
10 (-133/-10E)
20 (-133/-10E)
20 (-133/-10E)
UNBUFFERED
6 (-133/-10E)
NONPARITY
7.5 (-133)
20 (-10E)
7.5 (13E)
54 (-13E)
15 (-13E)
15 (-13E)
6 (-10E)
14 (-13E)
15 (-133)
7 (-13E)
8 (-10E)
SDRAM
1 or 2
LVTTL
NONE
20
2, 3
128
256
12
10
64
0E
0
8
1
4
0
0
MT8LSDT1664AG
168-PIN SDRAM DIMMs
128MB / 256MB (x64)
0A
A0
80
08
04
0C
01
40
00
01
70
75
80
54
60
00
80
08
00
01
8F
04
06
01
01
00
0E
75
54
60
00
00
0F
14
0E
0F
14
0F
14
MT16LSDT3264AG
©2001, Micron Technology, Inc.
0A
A0
80
08
04
0C
02
40
00
01
70
75
80
54
60
00
80
08
00
01
8F
04
06
01
01
00
0E
75
54
60
00
00
0F
14
0E
0F
14
0F
14