STU8NA80 STMicroelectronics, STU8NA80 Datasheet - Page 2

• Manufacturer Part Number: STU8NA80
• Description: N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
• Manufacturer: STMicroelectronics

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STU8NA80
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/5
V
Symbol
Symbol
Symbol
Symbol
R
R
Rthj-amb
R
V
g
(BR)DSS
I
thj-case
thc-sink
C
I
I
C
E
E
DS(on)
C
GS(th)
D(on)
fs
I
I
GSS
DSS
T
AR
AR
oss
AS
AR
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
DS
C, pulse width limited by T
= 25
= 0)
GS
o
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max,
max,
D
DS
DS
GS
DS
GS
GS
DS
GS
DS
DS
= 250 A
, V
= Max Rating
= Max Rating x 0.8 T
= V
= 10V
> I
= 10 V
> I
= 25 V
=
= 10V I
case
DD
D(on)
D(on)
GS
< 1%)
< 1%)
= 50 V)
30 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
I
j
D
D
D
f = 1 MHz
max,
V
o
= 250 A
= 4A
= 4A
DS(on)max
DS(on)max
C unless otherwise specified)
GS
= 0
< 1%)
T
c
= 100
V
c
I
GS
D
= 125
= 4 A
= 0
o
C
Max
Max
Typ
o
C
Min.
Min.
2.25
Min.
800
8.3
7
Max Value
2900
Typ.
Typ.
Typ.
0.78
62.5
0.85
290
300
320
9.5
0.5
5.3
80
14
8
3
Max.
1000
Max.
Max.
3800
3.75
250
370
110
100
1
2
oC/W
o
o
Unit
Unit
Unit
Unit
C/W
C/W
nA
mJ
mJ
pF
pF
pF
o
V
V
A
S
A
A
C
A
A