FQD4N20L Fairchild Semiconductor, FQD4N20L Datasheet - Page 4

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FQD4N20L

Manufacturer Part Number
FQD4N20L
Description
200V LOGIC N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQD4N20L
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
1
0
-100
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
0
※ Notes :
1 0
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
0
1 0
C
J
= 150
= 25
- 5
D = 0 .5
o
0 .0 2
0 .0 5
0 .0 1
C
o
0 .2
C
0 .1
50
DS(on)
DC
10 ms
Figure 11. Transient Thermal Response Curve
1 ms
100
1 0
(Continued)
o
- 4
C]
s in g le p u ls e
※ Notes :
10
100 s
1. V
2. I
t
2
1
D
GS
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
= 250 μ A
= 0 V
150
1 0
- 3
200
1 0
- 2
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
※ N o t e s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
- 1
P
θ J C
J M
DM
-50
50
- T
( t ) = 4 . 1 7 ℃ / W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
T
J
t
, Junction Temperature [
1
C
D M
t
1 0
0
, Case Temperature [ ℃ ]
2
* Z
0
75
1
/ t
θ J C
2
( t )
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 1.9 A
= 10 V
Rev. A2, December 2000
200
150

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