MTB60N06HD Motorola, MTB60N06HD Datasheet - Page 2

• Manufacturer Part Number: MTB60N06HD
• Description: TMOS POWER FET 60 AMPERES 60 VOLTS
• Manufacturer: Motorola

(1) Pulse Test: Pulse Width 300 s, Duty Cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
MTB60N06HD
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE–DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
2
Drain–to–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
Gate Threshold Voltage
Static Drain–Source On–Resistance
Drain–Source On–Voltage (V GS = 10 Vdc)
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V GS = 0 Vdc, I D = 250 Adc)
Temperature Coefficient (Positive)
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 125 C)
(V GS =
(V DS = V GS , I D = 250 Adc)
Threshold Temperature Coefficient (Negative)
(V GS = 10 Vdc, I D = 30 Adc)
(I D = 60 Adc)
(I D = 30 Adc, T J =125 C)
(V DS = 4.0 Vdc, I D = 30 Adc)
(See Figure 8)
(See Figure 8)
(See Figure 15)
(See Figure 15)
(Measured from the drain lead 0.25 from package to center of die)
(Measured from the source lead 0.25 from package to source bond pad)
20 Vdc, V DS = 0 Vdc)
C pk =
Characteristic
Max limit – Typ
3 x SIGMA
(I S = 60 Adc, V GS = 0 Vdc, T J = 125 C)
(T J = 25 C unless otherwise noted)
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DS = 48 Vdc, I D = 60 Adc,
(V DS = 48 Vdc, I D = 60 Adc,
(V DS = 48 Vdc, I D = 60 Adc,
(V DD = 30 Vdc, I D = 60 Adc,
(V DD = 30 Vdc, I D = 60 Adc,
(I S = 60 Adc, V GS = 0 Vdc)
(I S = 60 Adc, V GS = 0 Vdc,
(I S = 60 Adc, V GS = 0 Vdc,
(I S = 60 Adc, V GS = 0 Vdc,
2%.
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
V GS = 10 Vdc)
V GS = 10 Vdc)
V GS = 10 Vdc)
V GS = 10 Vdc,
V GS = 10 Vdc,
V GS = 10 Vdc,
f = 1.0 MHz)
f = 1.0 MHz)
f = 1.0 MHz)
R G = 9.1 )
R G = 9.1 )
R G = 9.1 )
G = 9.1 )
(C pk
(C pk
(C pk
2.0) (3)
3.0) (3)
3.0) (3)
Motorola TMOS Power MOSFET Transistor Device Data
V (BR)DSS
R DS(on)
V DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
I DSS
I GSS
C oss
Q RR
C iss
C rss
V SD
g FS
Q T
Q 1
Q 2
Q 3
L D
L S
t rr
t a
t b
t r
t f
Min
2.0
60
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.143
0.011
1950
0.99
0.89
Typ
660
147
197
124
3.0
7.0
4.5
7.5
—
71
—
—
—
—
—
20
14
50
51
12
24
21
60
36
24
0.014
2800
Max
100
100
920
300
394
102
246
4.0
1.0
0.9
1.0
10
26
71
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/ C
mV/ C
mhos
nAdc
Ohm
Unit
Vdc
Vdc
Vdc
Vdc
Adc
pF
nC
nH
nH
ns
ns
C