ATP213 Sanyo Semicon Device, ATP213 Datasheet - Page 3

• Manufacturer Part Number: ATP213
• Description: N-Channel Silicon MOSFET
• Manufacturer: Sanyo Semicon Device

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100
100
1.0
10
10
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
5
0
7
5
3
2
7
5
3
2
7
5
7
5
3
2
7
5
3
2
0.1
0.1
0
1
V DS =10V
Single pulse
Tc=25 ° C
Single pulse
V DD =30V
V GS =10V
2
0.2
2
2
3
3
3
25A
0.4
Drain-to-Source Voltage, V DS -- V
13A
4
Gate-to-Source Voltage, V GS -- V
I D =7A
5 7
5
5
7
0.6
R DS (on) -- V GS
Drain Current, I D -- A
Drain Current, I D -- A
1.0
1.0
SW Time -- I D
6
|
I D -- V DS
0.8
7
y
fs | -- I D
2
2
8
1.0
3
3
9
5 7
5 7
1.2
10
11
10
10
1.4
12
2
2
1.6
Tc=25 ° C
Single pulse
13
3
3
14 15
1.8
IT14839
IT14841
IT14837
5
5 7
IT14843
7
100
100
ATP213
2.0
16
0.001
1000
0.01
100
100
1.0
0.1
10
75
70
65
60
55
50
45
40
35
30
25
20
15
10
35
30
25
20
15
10
5
0
5
0
--50
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
0
0
0
V GS =0V
Single pulse
V DS =10V
Single pulse
0.5
--25
0.2
10
1.0
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
Diode Forward Voltage, V SD -- V
0
Case Temperature, Tc -- ° C
0.4
1.5
20
R DS (on) -- Tc
25
I D -- V GS
I S -- V SD
2.0
0.6
2.5
50
30
0.8
3.0
75
40
3.5
1.0
100
No. A1526-3/4
4.0
Single pulse
50
1.2
f=1MHz
125
4.5
IT14838
IT14840
IT14842
IT14844
150
5.0
1.4
60
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