STW8NA80 STMicroelectronics, STW8NA80 Datasheet - Page 2

• Manufacturer Part Number: STW8NA80
• Description: N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
• Manufacturer: STMicroelectronics

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STW8NA80 STH8NA80FI
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/6
V
Symbo l
Symbo l
Symbo l
Symbo l
R
R
R
R
V
g
(BR)DSS
I
thj -case
thc-sink
C
thj -amb
I
I
E
DS(on)
C
C
GS(th)
D(o n)
f s
I
GSS
DSS
T
AR
os s
AS
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature F or Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Parameter
Parameter
Parameter
j
DS
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max,
D
DS
DS
GS
DS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 25 V
= 10 V
= Max Rating
= Max Rating
=
= 10V I
> I
> I
case
DD
D(o n)
D(o n)
< 1%)
GS
= 50 V)
30 V
= 25
Test Con ditions
Test Con ditions
Test Con ditions
x R
x R
I
D
D
f = 1 MHz
V
o
= 250 A
= 4A
DS(on )ma x
DS(on )ma x
C unless otherwise specified)
GS
= 0
Max
Max
Typ
T
V
I
c
GS
D
= 100
= 4 A
= 0
TO-247
o
C
0.71
Min.
Min.
Min.
2.25
800
7.2
4.5
300
Max Value
0.1
30
1750
Typ.
Typ.
Typ.
ISOWATT 218
700
188
1.3
7.9
7.2
50
3
1.78
Max.
Max.
Max.
2300
3.75
500
100
245
1.5
50
70
o
o
o
Unit
Unit
Unit
Unit
C/W
C/W
C/W
mJ
nA
pF
pF
pF
o
V
V
A
S
A
C
A
A