MTP3N100E Motorola, MTP3N100E Datasheet - Page 3

• Manufacturer Part Number: MTP3N100E
• Description: TMOS POWER FET 3.0 AMPERES 1000 VOLTS
• Manufacturer: Motorola

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Motorola TMOS Power MOSFET Transistor Device Data
2.4
2.0
1.6
1.2
0.8
0.4
6
5
4
3
2
1
0
6
5
4
3
2
1
–50
1.0
0
Figure 3. On–Resistance versus Drain Current
V GS = 10 V
V GS = 10 V
I D = 1.5 A
T J = 25 C
1.5
2
–25
Figure 5. On–Resistance Variation with
Figure 1. On–Region Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
2.0
4
T J , JUNCTION TEMPERATURE ( C)
0
2.5
I D , DRAIN CURRENT (AMPS)
6
and Temperature
T J = 100 C
25
3.0
Temperature
8
– 55 C
25 C
3.5
10
50
TYPICAL ELECTRICAL CHARACTERISTICS
4.0
12
75
V GS = 10 V
4.5
14
100
4 V
6 V
5 V
5.0
16
125
18
5.5
150
6.0
20
100000
10000
1000
100
3.8
3.6
3.4
3.2
3.0
2.8
10
6
5
4
3
2
1
0
1
2.0
1.0
0
Figure 4. On–Resistance versus Drain Current
V DS 10 V
T J = 25 C
V GS = 0 V
100
1.5
2.4
Figure 6. Drain–To–Source Leakage
Figure 2. Transfer Characteristics
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
V GS , GATE–TO–SOURCE VOLTAGE (VOLTS)
200
2.8
2.0
Current versus Voltage
300
3.2
2.5
I D , DRAIN CURRENT (AMPS)
and Gate Voltage
400
3.6
3.0
T J = 125 C
100 C
500
25 C
4.0
3.5
25 C
4.4
600
4.0
15 V
700
4.5
4.8
V GS = 10 V
100 C
MTP3N100E
T J = –55 C
800
5.2
5.0
900
5.6
5.5
1000
3
6.0
6.0