FDU6692 Fairchild Semiconductor, FDU6692 Datasheet - Page 2

• Manufacturer Part Number: FDU6692
• Description: 30V N-Channel PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
W
I
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
AR
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
BV
V
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
SD
DSS
GS(th)
DSS
T
T
DSS
J
J
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Parameter
(Note 2)
(Note 2)
(Note 2)
Single Pulse, V
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
T
D
D
A
V
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= 250 A, Referenced to 25 C
= 250 A, Referenced to 25 C
= 25°C unless otherwise noted
GS
= 24 V,
= V
= 5 V,
= 15 V,
= 15 V,
= 15 V,
= 0 V, I
= 16 V,
= –16 V,
= 10 V,
= 4.5 V,
= 10 V, I
= 10 V,
= 10 V, R
= 5 V
= 0 V,
Test Conditions
GS
, I
D
D
= 250 A
= 250 A
D
I
GEN
S
= 14 A, T
DD
V
V
V
I
I
V
I
V
I
D
D
D
I
D
= 3.2 A
D
GS
DS
DS
DS
GS
= 14 A
= 13 A
= 14 A
= 14 A,
= 15 V, I
= 1 A,
= 6
= 0 V
= 0 V
= 0 V
= 5 V
= 0 V,
J
= 125 C
D
(Note 2)
=14A
Min
30
50
1
Typ Max Units
2164
0.72
11.5
16.5
357
138
1.6
9.5
26
–5
54
35
10
18
9
5
5
5
FDD/ FDU6692 Rev. C(W)
–100
14.5
165
100
3.2
1.2
14
10
25
12
18
18
56
20
1
3
mV/ C
mV/ C
m
mJ
nA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
V
A
V
V
A
S
A