RFD10P03L Intersil Corporation, RFD10P03L Datasheet - Page 4

• Manufacturer Part Number: RFD10P03L
• Description: 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET
• Manufacturer: Intersil Corporation

Typical Performance Curves
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
-50
-10
-1
-25
-20
-15
-10
0.01
-5
2.0
1.5
1.0
0.5
0
0
0
If R = 0
t
IF R
t
-80
AV
AV
PULSE DURATION = 250 s
DUTY CYCLE = 0.5% MAX
V
FIGURE 8. TRANSFER CHARACTERISTICS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
DD
GS
= (L) (I
= (L/R) ln [(I
= -15V
0
= -5V, I
CAPABILITY
RESISTANCE vs JUNCTION TEMPERATURE
-40
AS
V
GS
)/(1.3 RATED BV
T
STARTING T
D
-1.5
, GATE TO SOURCE VOLTAGE (V)
J
AS
t
= -10A
, JUNCTION TEMPERATURE (
AV
0
*R)/(1.3 RATED BV
0.1
, TIME IN AVALANCHE (ms)
7-6
40
J
= 150
DSS
-3.0
o
- V
RFD10P03L, RFD10P03LSM, RFP10P03L
C
80
-55
DD
STARTING T
DSS
o
)
C
1
Unless Otherwise Specified (Continued)
- V
120
DD
-4.5
o
) + 1]
C)
175
J
= 25
o
160
C
o
25
C
o
C
-6.0
200
10
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
-25
-20
-15
-10
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
-5
0
0
1.2
1.1
1.0
0.9
0.8
400
300
200
100
PULSE DURATION = 250 s
DUTY CYCLE = 0.5% MAX
T
C
-80
FIGURE 7. SATURATION CHARACTERISTICS
0
= 25
-2
I
D
o
=- 250uA
V
VOLTAGE AND DRAIN CURRENT
VOLTAGE vs JUNCTION TEMPERATURE
C
GS
-40
-1
V
= -10V
V
DS
GS
T
, DRAIN TO SOURCE VOLTAGE (V)
J
, GATE TO SOURCE VOLTAGE (V)
-4
, JUNCTION TEMPERATURE (
0
-2
40
I
I
I
I
D
D
D
D
= -20A
= -5A
= -2.5A
= -10A
-6
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
C
-3
80
V
V
V
= 25
V
GS
GS
GS
GS
o
= -5V
= -3.5V
= -3V
= -4V
C
120
-8
o
C)
-4
160
200
-10
-5