HAT2028R Hitachi Semiconductor, HAT2028R Datasheet

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HAT2028R

Manufacturer Part Number
HAT2028R
Description
Silicon N Channel Power MOS FET High Speed Power Switching
Manufacturer
Hitachi Semiconductor
Datasheet

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HAT2028R
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HAT2028R
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HAT2028R-EL-E
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HAT2028RJ-EL
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Features
Outline
For Automotive Application ( at Type Code “J “)
Low on-resistance
Capable of 4 V gate drive
High density mounting
HAT2028R/HAT2028RJ
Silicon N Channel Power MOS FET
G
2
SOP–8
High Speed Power Switching
MOS1
S
D
7 8
1
D
G
4
MOS2
8
7
6
S
D
5 6
5
3
D
1 2
3 4
1, 3
2, 4
5, 6, 7, 8 Drain
Source
Gate
ADE-208-524C (Z)
February 1999
4th. Edition

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HAT2028R Summary of contents

Page 1

... HAT2028R/HAT2028RJ Silicon N Channel Power MOS FET Features For Automotive Application ( at Type Code “J “) Low on-resistance Capable gate drive High density mounting Outline SOP– High Speed Power Switching ...

Page 2

... Drive operation : When using the glass epoxy board (FR4 1.6 mm), PW 10s 4. Value at Tch= Symbol V DSS V GSS I D Note1 I D(pulse Note4 HAT2028R I AP HAT2028RJ Note4 HAT2028R E AR HAT2028RJ Note2 Pch Note3 Pch Tch Tstg 1 % Ratings Unit — — — ...

Page 3

... Gate to source leak current Zero gate voltage HAT2028R drain current HAT2028RJ I Zero gate voltage HAT2028R drain current HAT2028RJ I Gate to source cutoff voltage Static drain to source on state resistance R Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...

Page 4

... HAT2028R/HAT2028RJ Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 10V Pulse Test Drain to Source Voltage 4 100 0.3 0.1 0.03 0.01 0.1 150 200 Ta (° ...

Page 5

... 0. 0.02 0 0.1 0.2 V (V) GS Forward Transfer Admittance vs 0.5 0.2 120 160 0.2 (°C) HAT2028R/HAT2028RJ vs. Drain Current 0 Drain Current I (A) D Drain Current Tc = –25 °C 25 °C 75 ° Pulse Test 0 Drain Current I (A) ...

Page 6

... HAT2028R/HAT2028RJ Body–Drain Diode Reverse Recovery Time 500 200 100 di/ A/µ 0.1 0.2 0.5 1 Reverse Drain Current Dynamic Input Characteristics 100 Gate Charge 6 1000 500 200 100 = 25° (A) DR ...

Page 7

... Monitor Vout Monitor D.U. td(on) HAT2028R/HAT2028RJ Maximun Avalanche Energy vs. Channel Temperature Derating 100 µH duty < 0 > 100 125 Channel Temperature Tch (°C) Avalanche Waveform V DSS 1 2 • L • I • ...

Page 8

... HAT2028R/HAT2028RJ Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation 0.5 0.1 0.01 0.001 0.0001 100 µ 10 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 100 µ 10 µ 8 When using the glass epoxy board (FR4 40x40x1.6 mm ...

Page 9

... Package Dimensions 5.0 Max 1.27 0.51 Max 6.2 Max 1.27 Max 0.15 0.25 M HAT2028R/HAT2028RJ Unit – 8 Hitachi code FP–8DA — EIAJ MS-012AA JEDEC 9 ...

Page 10

... This product is not designed to be radiation resistant one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. ...

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