HAT2020R Hitachi Semiconductor, HAT2020R Datasheet - Page 3

• Manufacturer Part Number: HAT2020R
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: Hitachi Semiconductor

Main Characteristics
4.0
3.0
2.0
1.0
20
16
12
8
4
0
0
Test Condition :
Drain to Source Voltage
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Power vs. Temperature Derating
Ambient Temperature
Typical Output Characteristics
4.5 V
10V
5 V
2
6 V
4 V
50
4
100
6
Pulse Test
150
V
Ta (°C)
DS
8
(V)
200
10
0.03
0.01
100
0.3
0.1
30
10
20
16
12
3
1
8
4
0.1
0
Operation in
this area is
limited by R
Ta = 25 °C
1 shot Pulse
Note 4 :
Drain to Source Voltage
Gate to Source Voltage
V
Pulse Test
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
0.3
1
= 10 V
Tc = 75°C
10 µs
1
DS(on)
2
3
100 µs
3
10
–25°C
25°C
V
V
HAT2020R
GS
DS
4
30
(V)
(V)
100
5
3