HAT1054R Renesas Technology, HAT1054R Datasheet - Page 5

• Manufacturer Part Number: HAT1054R
• Description: Silicon P Channel Power MOS FET Power Switching
• Manufacturer: Renesas Technology

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HAT1054R
Rev.3.00 Sep 07, 2005 page 5 of 7
0.0001
0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
10
1
1
10 µ
10 µ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
D = 1
D = 1
0.5
0.5
100 µ
100 µ
1 m
1 m
500
200
100
50
20
10
–0.2
5
V
Rg = 4.7 Ω, duty ≤ 1 %
10 m
10 m
t f
t r
GS
Switching Characteristics
–0.5
= –4.5 V, V
Pulse Width PW (S)
Pulse Width PW (S)
Drain Current
100 m
100 m
–1
DS
t d(on)
–2
= –10 V
t d(off)
1
1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
P
P
I
D
–5
DM
DM
(A)
–10
10
10
PW
PW
–20
T
T
100
100
D =
D =
1000
1000
PW
PW
T
T
10000
10000