BUK7518-55 Philips Semiconductors, BUK7518-55 Datasheet - Page 3

• Manufacturer Part Number: BUK7518-55
• Description: TrenchMOS transistor Standard level FET
• Manufacturer: Philips Semiconductors

Philips Semiconductors
AVALANCHE LIMITING VALUE
January 1997
TrenchMOS
Standard level FET
SYMBOL PARAMETER
W
DSS
ID% = 100 I
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
5 V
= 50 A; V
= 10 V; R
3
DD
GS
25 V;
= 50 ; T
I
0.001
D
0.01
0.1
& I
10
RDS(ON) = VDS/ID
Fig.3. Safe operating area. T
1000
1
1E-07
100
Fig.4. Transient thermal impedance.
10
DM
1
Zth j-mb / (K/W)
D =
1
0.05
0.02
mb
Z
0.5
0.2
0.1
= f(V
0
th j-mb
= 25 ˚C
DS
1E-05
= f(t); parameter D = t
); I
DC
DM
MIN.
single pulse; parameter t
10
-
1E-03
VDS / V
t / s
P
D
TYP.
-
Product specification
t
p
T
1E-01
BUK7518-55
mb
D =
100
MAX.
= 25 ˚C
p
BUKx55-lv
/T
125
t
T
p
t
tp =
1 us
10 us
100 us
1 ms
10 ms
100 ms
SOAX518
Rev 1.000
1E+01
UNIT
mJ
p