SSM6P16FE Toshiba Semiconductor, SSM6P16FE Datasheet - Page 2

• Manufacturer Part Number: SSM6P16FE
• Description: High Speed Switching Applications Analog Switching Applications
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Switching Time Test Circuit
Precaution
100 μA for this product. For normal switching operation, V
requires a lower voltage than V
V
Be sure to take this into consideration when using the device.
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
th
(a) Test circuit
can be expressed as the voltage between the gate and source when the low operating current value is I
−
2.5V
0
V
Duty < = 1%
V
(Z
Common Source
Ta = 25°C
DD
IN
out
10 μs
Characteristic
: t
= −3 V
r
= 50 Ω)
, t
f
< 5 ns
Turn-on time
Turn-off time
IN
th
. (The relationship can be established as follows: V
(Ta = 25°C) (Q1, Q2 common)
R
V
OUT
L
DD
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
GSS
DSS
V
t
t
on
off
oss
rss
iss
th
fs
⎪
V
I
V
V
V
I
I
I
V
V
V
(b) V
(c) V
D
D
D
D
GS
DS
DS
DS
DS
DD
GS
= −0.1 mA, V
= −10 mA, V
= −10 mA, V
= −1 mA, V
2
= −20 V, V
= −3 V, I
= −3 V, I
= −3 V, V
= ±10 V, V
= −3 V, I
= 0 ~ −2.5 V
GS (on)
OUT
IN
Test Condition
D
D
D
requires a higher voltage than V
GS
GS
GS
GS
= −0.1 mA
= −10 mA
DS
GS
= − 10 mA,
GS
V
= −1.5 V
= 0, f = 1 MHz
V
= −4 V
= −2.5 V
DD
= 0
= 0
= 0
DS (ON)
−2.5 V
0 V
GS (off)
t
on
10%
MIN.
−0.6
−20
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
r
90%
10%
< V
TYP.
th
130
190
3.7
18
11
10
⎯
⎯
⎯
⎯
⎯
6
8
SSM6P16FE
< V
t
www.DataSheet4U.com
90%
off
th
GS (on).
and V
2007-11-01
MAX.
−1.1
12
45
⎯
⎯
⎯
±1
⎯
−1
⎯
⎯
⎯
8
t
f
GS (off)
)
D
UNIT
mS
μA
μA
pF
pF
pF
ns
=
Ω
V
V