SSM3K16FS Toshiba Semiconductor, SSM3K16FS Datasheet

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SSM3K16FS

Manufacturer Part Number
SSM3K16FS
Description
Silicon N Channel MOS Type High Speed Switching Applications
Manufacturer
Toshiba Semiconductor
Datasheet

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High Speed Switching Applications
Analog Switch Applications
Absolute Maximum Ratings
Marking
Handling Precaution
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
Low on resistance: R
Suitable for high-density mounting due to compact package
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Note:
1
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
D S
3
: R
: R
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
on
on
on
2
DC
Pulse
= 4.0 Ω (max) (@V
= 15 Ω (max) (@V
= 3.0 Ω (max) (@V
SSM3K16FS
(Ta = 25°C)
Internal connections
Symbol
V
V
T
I
T
P
GSS
I
DP
DS
stg
D
ch
D
GS
GS
GS
1
= 1.5 V)
= 2.5 V)
= 4 V)
−55~150
Rating
3
±10
100
200
100
150
20
1
2
Unit
mW
mA
°C
°C
V
V
Weight: 2.4 mg (typ.)
JEDEC
JEITA
TOSHIBA
SSM3K16FS
2-2H1B
2007-11-01
Unit: mm

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SSM3K16FS Summary of contents

Page 1

... 2 1 (Ta = 25°C) Symbol Rating Unit ± GSS I 100 200 DP P 100 mW D °C T 150 ch −55~150 °C T stg Internal connections SSM3K16FS Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2H1B Weight: 2.4 mg (typ.) 2007-11-01 ...

Page 2

... mA 0~2 off ( OUT (c) V OUT V DD requires higher voltage than V GS (on) 2 SSM3K16FS Min Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.6 ⎯ ⎯ 1.5 = 2.5 V ⎯ 2.2 = 1.5 V ⎯ 5 MHz ⎯ ...

Page 3

... 1 1.5 2 (V) DS – Common source Ta = 25°C 100 1000 (mA) D – 100 125 150 3 SSM3K16FS I – 1000 Common source 100 Ta = 100°C 10 25°C −25°C 1 0.1 0. Gate-Source voltage V ( – V ...

Page 4

... I D 100 1000 I (mA iss C oss C rss 100 (V) DS – 100 120 140 160 4 SSM3K16FS I – 250 Common source 25°C 200 150 G S 100 50 0 −0.2 −0.4 −0.6 −0.8 −1 0 Drain-Source voltage V ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM3K16FS 20070701-EN GENERAL 2007-11-01 ...

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