BF2000 Siemens Semiconductor Group, BF2000 Datasheet

BF2000

Manufacturer Part Number

BF2000

Description

Silicon N Channel MOSFET Tetrode

Manufacturer

Siemens Semiconductor Group

Datasheet

1.BF2000.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BF2000W

Manufacturer:

MAXIM

Quantity:

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Semiconductor Group

Silicon N Channel MOSFET Tetrode

Target data sheet

Type

BF 2000

Maximum Ratings

Parameter

Drain-source voltage

Continuos drain current

Gate 1/gate 2 peak source current

Total power dissipation, T

Storage temperature

Channel temperature

Thermal Resistance

Channel - soldering point

Semiconductor Group

Short-channel transistor

For low-noise, gain-controlled

with high S/C quality factor

input stages up to 1 GHz

Marking Ordering Code

NDs

Q62702-F1771

= 76 °C

Pin Configuration

1 = S

Symbol

± I

tot

stg

thchs

G1/2SM

2 = D

3 = G2

- 55 ...+150

Value

200

150

370

4 = G1

Au -03-1998

BF 2000

Package

SOT-143

1998-11-01

VPS05178

Unit

°C

K/W

Related parts for BF2000

BF2000 Summary of contents

Page 1

Silicon N Channel MOSFET Tetrode Target data sheet Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages GHz Type Marking Ordering Code BF 2000 NDs Q62702-F1771 Maximum Ratings Parameter Drain-source voltage Continuos drain current ...

Page 2

Electrical Characteristics at T Parameter DC characteristics Drain-source breakdown voltage µ G1S Gate 1 source breakdown voltage ± mA G1S G2S Gate 2 ...

Page 3

Electrical Characteristics at T Parameter AC characteristics Forward transconductance mA G2S Gate 1 input capacitance mA G2S Gate 2 input ...

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