T35L3232B TM Technology Inc., T35L3232B Datasheet - Page 12

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T35L3232B

Manufacturer Part Number
T35L3232B
Description
32k X 32 Sram Pipeline And Flow-through Burst Mode
Manufacturer
TM Technology Inc.
Datasheet
tm
PIN DESCRIPTIONS
Taiwan Memory Technology, Inc. reserves the right
to change products or specifications without notice.
2, 3, 6-9, 12, 13,
28, 29, 52, 53,
4,11,20,27,54,
5,10,21,26,55,
18, 19, 22-25,
56-59, 62, 63,
68, 69, 72-75,
50, 51, 66,80
39,42,43,49,
15,41,65,91
17,40,67,90
QFP PINS
1,16,30,38,
61,70,77
60,71,76
78, 79,
85
14
31
64
CH
TE
MODE
ADSC
VCCQ
VSSQ
SYM.
DQ32
DQ1-
VCC
VSS
NC
FT
ZZ
(continued)
Synchronous
I/O Ground
I/O Supply
Ground
Supply
Output
TYPE
Input-
Input-
Input-
Input/
Static
Static
Input
-
Address Status Controller:This active LOW input causes
device to be deselected or selected along with new external
address to be registered.
initiated depending upon write control inputs.
A LOW on this pin selects in flow-through mode. A NC or
HIGH on this pin selects in pipeline mode.
Mode: This input selects the burst sequence. A LOW on this
pin selects LINEAR BURST. A NC or HIGH on this pin
selects INTERLEAVED BURST. Do not alter input state
while device is operating.
Snooze Enable: This active HIGH asynchronous input causes
the device to enter a low-power standby mode in which all
data in the memory arry is retained.
Data Inputs/Outputs: First Byte is DQ1-DQ8. Second Byte is
DQ9-DQ16. Third Byte is DQ17-DQ24. Fourth Byte is DQ25-
DQ32. Input data must meet setup and hold times around the
rising edge of CLK.
Power Supply: 3.3V +10%/-5%
Ground: GND
Output Buffer Supply: 3.3V +10%/-5%
Output Buffer Ground: GND
No Connect: These signals are not internally conntected.
P. 5
Preliminary T35L3232B
DESCRIPTION
A READ or WRITE cycle is
Publication Date: FEB. 2000
Revision:0.A

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