TPCT4202 Toshiba, TPCT4202 Datasheet

TPCT4202

Manufacturer Part Number

TPCT4202

Description

Lithium Ion Battery Applications

Manufacturer

Toshiba

Datasheets

1.TPCT4202.pdf (9 pages)

2.TPCT4202.pdf (4 pages)

3.TPCT4202.pdf (9 pages)

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Lithium Ion Battery Applications

Absolute Maximum Ratings

【Handling Precaution for Power MOSFET in use of Protection Circuit for Battery Pack】

Flame-retardant resins of UL94-V0 flammability class are used in packages, however, they are not

noncombustible.

Use a unit, for example PTC Thermistor, which can shut off the power supply if a short-circuit occurs.

If the power supply is not shut off on the occurring short-circuit, a large short-circuit current

will flow continuously, which may cause the device to catch fire or smoke. The product listed in this

document is intended for usage in Lithium Ion Battery charge and discharge control application. So

it is responsible for customer when using the product in the different application.

Source-source voltage

Gate-source voltage

Source current

Power dissipation

(t = 10 s)

Power dissipation

(t = 10 s)

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 5, see the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

Lead (Pb)-free

Small footprint due to a small and thin package

Low source-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Common drain

WARNING

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII)

Pulse

(Note 2a, 3)

(Note 2b, 3)

SSS

(Note 2a, 5)

= 0.5~1.2 V (V

(Note 4)

(Note 1)

= 10 μA (max) (V

(Ta = 25°C)

SS (ON)

Symbol

| = 15 S (typ.)

TPCT4202

GSS

SSS

stg

= 10 V, I

= 30.5 mΩ (typ.)

= 30 V)

−55~150

Rating

= 200μA)

0.51

46.8

0.17

±12

150

1.7

Unit

°C

Weight: 0.012 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

0.45

0.14±0.04

0.5+0.04

0.4±0.1

-0.16

0.85 ± 0.1

1.GATE 1. 3.SOURCE 2

2.GATE 2 4.SOURCE 1

0.025 M

3.8 ± 0.1

FET1

0.05

FET2

2.53 ± 0.1

2-2S1A

TPCT4202

2007-01-16

―

0.6±0.05

0.2±

Unit: mm

2.0±0.1

0.4+0.2

0.05

-0.1

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