TPCP8J01 Toshiba Semiconductor, TPCP8J01 Datasheet - Page 5

• Manufacturer Part Number: TPCP8J01
• Description: Multi-chip Device Epitaxial Transistor
• Manufacturer: Toshiba Semiconductor

MOSFET
−100
−0.1
−10
−10
−5
−4
−3
−2
−1
−8
−6
−8
−4
−1
−0.1
0
0
0
0
−4.5
Common source
V DS = −10 V
Pulse test
−10
Common source
V DS = −10 V
Pulse test
−0.2
Drain-source voltage V DS
Gate-source voltage V GS
−1
Drain current I D (A)
100
−1
Ta = −55°C
−0.4
100
−3
−2
⎪Y
−3.5
I
I
D
−2.8
D
fs
– V
−2.
– V
⎪ – I
DS
25
GS
−2.6
Ta = −55°C
−0.6
−3
D
−10
25
Common source
Ta = 25°C
Pulse test
V GS = −2.1V
−0.8
(V)
(V)
−4
−2.4
−2.3
−2.2
−2.5
−1.0
−100
−5
5
1000
−0.5
−0.4
−0.3
−0.2
−0.1
−10
100
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
Common source
Ta = 25°C
Pulse test
Drain-source voltage V DS
Gate-source voltage V GS
−3
−1
−2
−3.5
−10
−1.3
−4.5
Drain current I D (A)
−1
R
V
−4
−2
DS (ON)
I
DS
D
– V
– V
−2.7
−4
DS
−2.8
V GS = −10 V
GS
– I
−3
−6
D
−10
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Common source
Ta = 25℃
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −2.1 V
I D = −5.5 A
(V)
(V)
−4
−8
−2.2
TPCP8J01
−2.5
−2.4
−2.6
−2.3
2006-11-17
−2.7
−100
−10
−5