TPCF8302 Toshiba Semiconductor, TPCF8302 Datasheet - Page 3

• Manufacturer Part Number: TPCF8302
• Description: Notebook PC Applications
• Manufacturer: Toshiba Semiconductor

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
R
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
DS (ON)
V
I
Q
I
I
C
|Y
C
C
Q
GSS
DRP
DSS
V
t
t
Q
DSF
on
off
oss
t
gs1
rss
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
= −3 A
GS
3
= −3.0 A, V
(Ta = 25°C)
= −20 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±10V, V
= −2.0 V, I
= −2.5 V, I
= −4.5 V, I
∼ − −16 V, V
−5 V
0 V
Test Condition
Test Condition
w
= 10 μs
D
D
DS
GS
GS
D
D
D
GS
GS
GS
GS
= −200 μA
= −1.5 A
⎯
= −1.5 A
= −1.5 A
= −1.5 A
= 0 V
= 0 V
= 10 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −5 V,
V
I
D
DD
= −1.5 A
∼ − −10 V
V
OUT
−0.5
−20
−10
Min
Min
3.1
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Typ.
Typ.
100
800
120
160
6.2
6.2
1.1
3.3
68
44
15
17
51
11
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www.DataSheet4U.com
TPCF8302
2006-11-16
Max
−1.2
Max
−12
±10
−10
200
1.2
95
59
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Unit
Unit
mΩ
nC
μA
μA
pF
ns
A
V
V
S
V