TPCF8104 Toshiba Semiconductor, TPCF8104 Datasheet

TPCF8104

Manufacturer Part Number

TPCF8104

Description

Notebook PC Applications

Manufacturer

Toshiba Semiconductor

Datasheet

1.TPCF8104.pdf (7 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

TPCF8104

Manufacturer:

TOSHIBA

Quantity:

792

Company:

BOSTOCK HK LIMITED

Part Number:

TPCF8104

Manufacturer:

TOSHIBA

Quantity:

8 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

TPCF8104(TE85L

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

TPCF8104(TE85L,F)

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

Current page: 1 of 7
Download datasheet (255Kb)

Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single pulse avalanche energy (Note 3)

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)

Pulse

= 20 kΩ)

DSS

(Note 2a)

(Note 2b)

= −0.8 to −2.0 V

(Note 1)

(Note 4)

(t = 5 s)

= −10 μA (max) (V

= −10 V, I

DS (ON)

(Ta = 25°C)

Symbol

TPCF8104

| = 9.6 S (typ.)

= −1mA)

DGR

GSS

DSS

stg

= 21 mΩ (typ.)

= −30 V)

−55~150

Rating

0.25

150

−30

±20

−24

2.5

0.7

5.8

−6

−3

Unit

°C

Weight: 0.011 g (typ.)

Circuit Configuration

JEDEC

JEITA

TOSHIBA

www.DataSheet4U.com

2-3U1A

TPCF8104

2006-11-16

―

Unit: mm

Related parts for TPCF8104

Related keywords

TPCF8104 datasheet
TPCF8104 data sheet
TPCF8104 pdf datasheet
TPCF8104 component
TPCF8104 part
TPCF8104 distributor
TPCF8104 RoHS
TPCF8104 datasheet download