TPC6004 Toshiba Semiconductor, TPC6004 Datasheet - Page 5

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TPC6004

Manufacturer Part Number
TPC6004
Description
Notebook PC Applications
Manufacturer
Toshiba Semiconductor
Datasheet

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300
100
2.5
1.5
0.5
30
10
60
50
40
30
20
10
−80
0
0.1
2
1
0
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1) t = 5 s
(1) DC
(2) t = 5 s
(2) DC
V GS = 2 V
V GS = 2.5 V
0.3
−40
Ambient temperature Ta (
Ambient temperature Ta (
I D = 1.5 A, 3 A
Drain-source voltage V DS
40
Capacitance
V GS = 4.5 V
0
1
R
DS (ON)
P
I D = 1.5 A, 3 A
D
40
80
3
– Ta
(1) Device mounted on a
(2) Device mounted on a
– Ta
– V
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
I D = 1.5 A, 3 A, 6 A
DS
10
80
I D = 6 A
120
°
°
C)
C)
120
30
C oss
C rss
C iss
100
160
160
5
100
0.3
0.1
2.0
1.5
1.0
0.5
30
10
20
16
12
−80
0
8
4
0
3
1
0
0
10 V
5 V
3 V
Dynamic input/output characteristics
1 V
−40
−0.4
Drain-source voltage V DS (V)
Ambient temperature Ta (
8
Total gate charge Q g (nC)
0
−0.8
V GS = 0 V
16
I
DR
V
th
4 V
– V
40
– Ta
DS
−1.2
8 V
20
80
Common source
I D = 6 A
Ta = 25°C
Pulse test
V DD = 16 V
Common source
V DS = 10 V
I D = 200 µA
Pulse test
Common source
Ta = 25°C
Pulse test
°
C)
−1.6
32
120
2007-01-15
TPC6004
www.DataSheet4U.com
−2.0
160
40
20
16
12
8
4
0

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