K2599 Toshiba Semiconductor, K2599 Datasheet
K2599
Manufacturer Part Number
K2599
Description
Search -----> 2SK2599
Manufacturer
Toshiba Semiconductor
Datasheet
1.K2599.pdf
(6 pages)
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Part Number:
K2599
Manufacturer:
TOSHIBA
Quantity:
7 483
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Part Number:
K2599
Manufacturer:
TOSHIBA
Quantity:
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Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
Characteristics
= 90 V, T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
DC
Pulse (t = 1 ms)
Pulse (t = 100 μs)
GS
= 20 kΩ)
ch
= 25°C (initial), L = 48.4 mH, R
(Note 1)
(Note 1)
(Note 1)
(Note 2)
: I
: V
DSS
th
= 2.0~4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
Symbol
: R
: |Y
V
V
V
E
E
T
I
I
I
T
P
DGR
GSS
DSS
I
DP
DP
AR
AS
AR
stg
D
ch
D
DS (ON)
2SK2599
R
fs
Symbol
th (ch−a)
| = 1.7 S (typ.)
DS
= 2.9 Ω (typ.)
= 10 V, I
−55~150
Rating
DS
0.13
500
500
±30
112
150
1.3
12
2
5
2
1
G
Max
96.1
= 500 V)
= 25 Ω, I
D
= 1 mA)
°C / W
Unit
Unit
AR
mJ
mJ
°C
°C
W
A
A
V
V
V
A
A
= 2 A
Weight: 0.54 g (typ.)
JEDEC
JEITA
TOSHIBA
2-8M1B
2006-11-02
―
―
2SK2599
Unit: mm
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K2599 Summary of contents
Page 1
... 1 112 0. 150 ° −55~150 °C stg Symbol Max Unit R 96.1 ° (ch− Ω 2SK2599 JEDEC ― JEITA ― TOSHIBA 2-8M1B Weight: 0.54 g (typ 2006-11-02 Unit: mm ...
Page 2
... DRP 100 μs DRP DSF 100 A / μ 2SK2599 Min Typ. Max — — ±10 ±30 — — — — 100 500 — — 2.0 — 4.0 — 2.9 3.2 0.8 1.7 — — ...
Page 3
... www.DataSheet4U.com 3 2SK2599 2006-11-02 ...
Page 4
... www.DataSheet4U.com 4 2SK2599 2006-11-02 ...
Page 5
... Ω 48 2SK2599 1 ⎛ B ⎞ VDSS ⋅ ⋅ ⋅ ⎜ ⎟ − V ⎝ VDSS DD ⎠ 2006-11-02 ...
Page 6
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK2599 20070701-EN 2006-11-02 ...