K15A50D Toshiba Semiconductor, K15A50D Datasheet

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K15A50D

Manufacturer Part Number
K15A50D
Description
Search -----> TK15A50D
Manufacturer
Toshiba Semiconductor
Datasheet

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Part Number
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Quantity
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Part Number:
K15A50D
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
www.DataSheet.co.kr
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
Characteristics
= 90 V, T
DC
Pulse (t = 1 ms)
ch
DSS
th
= 2.0 to 4.0 V (V
= 25°C (initial), L = 4.1 mH, R
(Note 1)
(Note 1)
(Note 2)
= 10 μA (V
DS (ON)
(Ta = 25°C)
Symbol
TK15A50D
DS
V
V
fs
E
E
T
I
T
I
P
DSS
GSS
I
DP
AR
| = 7.0 S (typ.)
AS
AR
stg
D
ch
D
R
R
Symbol
= 500 V)
DS
th (ch-c)
th (ch-a)
= 0.24 Ω (typ.)
= 10 V, I
−55 to 150
Rating
500
±30
542
150
D
5.0
15
60
50
15
G
1
= 1 mA)
Max
62.5
= 25 Ω, I
2.5
AR
Unit
mJ
mJ
°C/W
°C/W
°C
°C
W
V
V
A
A
Unit
= 15 A
Weight : 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
1: Gate
2: Drain
3: Source
1
2-10U1B
TK15A50D
SC-67
2008-09-16
Unit: mm
2
3
Datasheet pdf - http://www.DataSheet4U.net/

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K15A50D Summary of contents

Page 1

... AS (Note 5 150 ch −55 to 150 T stg Symbol Max R 2.5 th (ch-c) R 62.5 th (ch-a) = 25°C (initial 4.1 mH Ω TK15A50D Unit Gate A 2: Drain 3: Source W mJ JEDEC ― A JEITA SC-67 mJ TOSHIBA 2-10U1B °C Weight : 1.7 g (typ.) °C Unit °C/W °C ...

Page 2

... I DR (Note 1) ⎯ (Note 1) I DRP = DSF /dt = 100 A/μ TK15A50D Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 10 ⎯ ⎯ 500 ⎯ 2.0 4.0 ⎯ 0.24 0.3 ⎯ 2.0 7.0 ⎯ ⎯ 2300 ⎯ ⎯ 10 ⎯ ...

Page 3

... 5 (V) DS – −55° (V) GS ⎪ – 100 10 100 ( TK15A50D I – COMMON SOURCE 25°C 8.5 PULSE TEST 7 6 DRAIN-SOURCE VOLTAGE – ...

Page 4

... CASE TEMPERATURE Tc (°C) – 15A 7.5 3 120 160 DS C iss C oss C rss 100 10 (V) DS – 120 160 80 4 TK15A50D I – 100 COMMON SOURCE Tc = 25°C PULSE TEST 0.1 −0.4 −0.8 −1.0 −1.2 0 −0.2 −0.6 ...

Page 5

... V DSS max 100 1000 (V) DS − Ω 4 TK15A50D Duty = t (ch-c) = 2.5°C – 100 125 150 CHANNEL TEMPERATURE (INITIAL) T (° VDSS ...

Page 6

... Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK15A50D 20070701-EN GENERAL 2008-09-16 Datasheet pdf - http://www.DataSheet4U.net/ ...

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