AT-32063 Agilent(Hewlett-Packard), AT-32063 Datasheet

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AT-32063

Manufacturer Part Number
AT-32063
Description
Low Current/ High Performance NPN Silicon Bipolar Transistor
Manufacturer
Agilent(Hewlett-Packard)
Datasheet

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Low Current, High Performance
NPN Silicon Bipolar Transistor
Technical Data
Features
• High Performance Bipolar
• 900 MHz Performance:
• Characterized for End-of-
• SOT-363 (SC-70) Plastic
• Tape-and-Reel Packaging
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and
Package Marking
Transistor Optimized for
Low Current, Low Voltage
Operation
1.1 dB NF, 14.5 dB G
Life Battery Use (2.7 V)
Package
Option Available
B
C
E
1
1
2
1
2
3
6
5
4
[1]
C
E
B
1
2
2
A
Description
The AT-32063 contains two high
performance NPN bipolar transis-
tors in a single SOT-363 package.
The devices are unconnected,
allowing flexibility in design. The
pin-out is convenient for cascode
amplifier designs. The SOT-363
package is an industry standard
plastic surface mount package.
The 3.2 micron emitter-to-emitter
pitch and reduced parasitic design
of the transistor yields extremely
high performance products that
can perform a multiplicity of
tasks. The 20 emitter finger
interdigitated geometry yields a
transistor that is easy to match to
and extremely fast, with moderate
power, low noise resistance, and
low operating currents.
Optimized performance at 2.7 V
makes this device ideal for use in
900 MHz, 1.8 GHz, and 2.4 GHz
battery operated systems as an
4-63
AT-32063
LNA, gain stage, buffer, oscillator,
or active mixer. Typical amplifier
designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more
associated gain at a 2.7 V, 5 mA
bias, with noise performance
being relatively insensitive to
input match. High gain capability
at 1 V, 1 mA makes this device a
good fit for 900 MHz pager appli-
cations. Voltage breakdowns are
high enough for use at 5 volts.
The AT-3 series bipolar transistors
are fabricated using an optimized
version of Hewlett-Packard’s
10 GHz f
Aligned-Transistor (SAT) process.
The die are nitride passivated for
surface protection. Excellent
device uniformity, performance
and reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metallization in the fabrication of
these devices.
t
, 30 GHz f
max
5965-8921E
Self-

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AT-32063 Summary of contents

Page 1

... Description The AT-32063 contains two high performance NPN bipolar transis- tors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design. The pin-out is convenient for cascode amplifier designs. The SOT-363 package is an industry standard plastic surface mount package. ...

Page 2

... AT-32063 Absolute Maximum Ratings Symbol Parameter V Emitter-Base Voltage EBO V Collector-Base Voltage CBO V Collector-Emitter Voltage CEO I Collector Current C P Power Dissipation [2, Junction Temperature j T Storage Temperature STG Electrical Specifications, T Symbol Parameters and Test Conditions NF Noise Figure 2 Associated Gain 2 ...

Page 3

... AT-32063 Characterization Information, T Symbol Parameters and Test Conditions P Power Gain Compression (opt tuning Gain Gain Compression (opt tuning Output Third Order Intercept Point (opt tuning Typical Performance 2.00 1.50 1.00 0.50 2.7V/2 mA 2.7V/5 mA 2.7V/ 0.9 1.8 2.4 FREQUENCY (GHz) Figure 2. Minimum Noise Figure vs. ...

Page 4

... AT-32063 Typical Scattering Parameters, Freq GHz Mag Ang 0.1 0.96 -12 16.46 0.5 0.77 -55 14.73 0.9 0.59 -87 12.37 1.0 0.55 -93 11.74 1.5 0.42 -121 1.8 0.37 -135 2.0 0.34 -145 2.4 0.29 -164 3.0 0.26 167 4.0 0.28 124 5.0 0.33 94 AT-32063 Typical Noise Parameters Common Emitter 2 Freq. F min G A GHz dB dB 0.9 0.78 14.3 1.8 1.25 10.7 2.4 1.57 9.1 Common Emitter Mag Ang dB 3.7 171 -34.77 3.21 138 -22.02 8.39 2.63 113 -18.97 7.87 2.48 108 -18.61 5.87 1 ...

Page 5

... AT-32063 Typical Scattering Parameters, Freq GHz Mag Ang 0.1 0.55 -41 30.48 0.5 0.20 -107 21.24 0.9 0.13 -137 16.48 1.0 0.13 -141 15.60 1.5 0.10 -164 12.26 1.8 0.09 -178 10.78 2.0 0.09 172 2.4 0.08 152 3.0 0.10 127 4.0 0.15 101 5.0 0.21 86 AT-32063 Typical Noise Parameters Common Emitter 2 Freq. F min G A GHz dB dB 0.9 1.51 17.9 1.8 1.78 12.7 2.4 1.96 10.6 Common Emitter Mag Ang dB 14.72 162 -37.77 9.13 116 -27.03 5.89 94 -24.01 5.37 90 -23.41 3.77 74 -20.85 3.21 66 -19 ...

Page 6

... AT-32063 Typical Scattering Parameters, Freq GHz Mag Ang 0.1 0.61 -36 30.56 0.5 0.22 -91 21.75 0.9 0.13 -115 17.02 1.0 0.12 -118 16.14 1.5 0.08 -137 12.80 1.8 0.06 -148 11.31 2.0 0.06 -159 10.46 2.4 0.04 175 3.0 0.05 131 4.0 0.10 99 5.0 0.16 86 AT-32063 Typical Noise Parameters Common Emitter Freq. F min G A GHz dB dB 0.9 1.50 18.6 1.8 1.78 13.3 2.4 1.96 11.3 Common Emitter Mag Ang dB 6.69 169 -38.44 5.52 133 -26.20 4.23 108 -23.4 3.94 104 -23.04 2.97 84 -21.71 2.57 74 -21.04 2.38 68 -20 ...

Page 7

... BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.25 (0.010) 0.15 (0.006) DIMENSIONS ARE IN MILLIMETERS (INCHES) Part Number Ordering Information Part Number No. of Devices AT-32063-TR1 AT-32063-BLK 0.425 (0.017) TYP. 0.30 REF. 0.20 (0.008) 0.10 (0.004) 10 0.30 (0.012) 0.10 (0.004) Container 3000 7" Reel 100 antistatic bag 4-69 ...

Page 8

... A 0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) TOP VIEW CARRIER II II TAPE SYMBOL SIZE (mm) ...

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