2SJ610 Toshiba Semiconductor, 2SJ610 Datasheet

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2SJ610

Manufacturer Part Number
2SJ610
Description
Switching Regulator/ DC-DC Converter and Motor Drive Applications
Manufacturer
Toshiba Semiconductor
Datasheet

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Switching Regulator, DC-DC Converter and
Motor Drive Applications
·
·
·
·
Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement-mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Please use devices on condition that the channel temperature
Note 2: V
Note 3: Repetitive rating: Pulse width limited by maximum channel
This transistor is an electrostatic sensitive device. Please handle with
caution.
is below 150°C.
R
temperature
Characteristics
DD
G
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
= 25 W
= -50 V, T
GS
DC
Pulse (t = 1 ms)
= 20 kW)
(Tc = = = = 25°C)
DSS
th
ch
= −1.5~−3.5 V (V
(Note 1)
(Note 1)
(Note 2)
= 25°C (initial), L = 75 mH, I
= −100 µA (V
DS (ON)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
DGR
DSS
GSS
I
DP
AR
| = 18 S (typ.)
AS
AR
stg
D
ch
D
R
R
DS
Symbol
th (ch-c)
th (ch-a)
DS
2SJ610
= 1.85 Ω (typ.)
= −250 V)
= 10 V, I
-55~150
Rating
-250
-250
-2.0
-4.0
-2.0
±20
180
150
2.0
AR
20
1
D
Max
6.25
125
= -2.0 A,
= 1 mA)
Unit
mJ
mJ
°C/W
°C/W
°C
°C
W
V
V
V
A
A
Unit
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-7B1B
2-7J1B
SC-64
2002-09-11
2SJ610
Unit: mm

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2SJ610 Summary of contents

Page 1

... 180 -2 2 150 °C ch -55~150 T °C stg Symbol Max Unit R 6.25 °C/W th (ch-c) R 125 °C/W th (ch- 2SJ610 Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 2002-09-11 ...

Page 2

... ¾ ¾ 100 ¾ ¾ 36 ¾ ¾ 24 ¾ 11 ¾ ¾ ¾ 13 Min Typ. Max ¾ ¾ -2.0 ¾ ¾ -4 ¾ ¾ 2 ¾ 120 ¾ ¾ ¾ 540 2002-09-11 2SJ610 Unit Unit ...

Page 3

... Drain-source voltage V - Gate-source voltage V 10 Common source Tc = 25° Pulse test 3 1 0.5 0.3 0.1 -5 -10 -0.01 -0.03 3 2SJ610 I – -5.5 -8 -15 - -10 -15 -20 ( – Common source Tc = 25°C Pulse test - ...

Page 4

... Pulse test -10 -1 0.1 120 160 0 0 -80 -40 -30 -100 Dynamic input/output characteristics -300 V DS -200 -100 0 200 2SJ610 I – - 0.4 0.6 0.8 1.0 1.2 1.4 Drain-source voltage V ( – Common source Pulse test ...

Page 5

... Pulse width t (S) w 200 160 120 Channel temperature (initial -15 V 300 500 1000 Test circuit - 2SJ610 t T Duty = t (ch-c) = 6.25°C/W 10 100 E – 100 125 150 (° VDSS ...

Page 6

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2SJ610 000707EAA 2002-09-11 ...

Page 7

... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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