SI5441DC Vishay Siliconix, SI5441DC Datasheet
SI5441DC
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SI5441DC Summary of contents
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... GS −20 0. −3 0.083 @ V = −2 1206-8 ChipFET Bottom View Ordering Information: Si5441DC ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current a Continuous Source Current a a Maximum Power Dissipation ...
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... Si5441DC Vishay Siliconix SPECIFICATIONS (T J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Drain Source On State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... Source-to-Drain Voltage (V) SD Document Number: 71055 S-50366—Rev. C, 28-Feb 150_C 25_C J 0.6 0.8 1.0 1.2 Si5441DC Vishay Siliconix Capacitance 1800 C 1500 iss 1200 900 600 C oss 300 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si5441DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0.4 0.2 0.0 −0.2 −50 − − Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 −4 − Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...