STD12NF06 ST Microelectronics, Inc., STD12NF06 Datasheet

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STD12NF06

Manufacturer Part Number
STD12NF06
Description
N-channel 60V - 0.08 Ohm - 12A Ipak/dpak StripFET ii Power MOSFET
Manufacturer
ST Microelectronics, Inc.
Datasheet

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DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
December 2001
.
STD12NF06
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL , AUDIO AMPLIFIERS
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT
Pulse width limited by safe operating area.
Symbol
dv/dt
E
I
V
DM
V
V
P
AS (2)
T
DGR
I
I
T
GS
stg
DS
TYPE
D
D
tot
(
j
(1)
therefore
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuos) at T
Drain Current (continuos) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.08
a
V
60 V
DSS
remarkable
Parameter
R
<0.1
N-CHANNEL 60V - 0.08
DS(on)
C
GS
= 25°C
GS
= 20 k )
manufacturing
= 0)
C
C
= 25°C
= 100°C
12 A
I
D
STripFET™ II POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) I
(2) Starting T
SD
12A, di/dt 200A/µs, V
(Suffix “-1”)
j
TO-251
= 25
IPAK
-55 to 175
o
Value
C, I
± 20
140
8.5
0.2
60
60
12
48
30
15
D
1
= 6A, V
2
- 12A IPAK/DPAK
3
DD
STD12NF06
DD
V
= 30V
(BR)DSS
(Suffix “T4”)
, T
TO-252
DPAK
j
T
JMAX
1
W/°C
V/ns
Unit
mJ
3
°C
W
V
V
V
A
A
A
1/10

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STD12NF06 Summary of contents

Page 1

... STripFET™ II POWER MOSFET R I DS(on) D <0 INTERNAL SCHEMATIC DIAGRAM manufacturing = 25° 100° 25° (2) Starting T STD12NF06 - 12A IPAK/DPAK IPAK DPAK TO-251 TO-252 (Suffix “-1”) (Suffix “T4”) Value 60 60 ± 8 0.2 15 140 -55 to 175 12A, di/dt 200A/µ ...

Page 2

... STD12NF06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ON Symbol Parameter ...

Page 3

... (Resistive Load, Figure 3) Test Conditions di/dt = 100A/µ 150° (see test circuit, Figure 5) Thermal Impedance STD12NF06 Min. Typ. Max. Unit 3.0 nC 3.5 nC Min. Typ. Max. Unit Min. ...

Page 4

... STD12NF06 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/10 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature . STD12NF06 5/10 ...

Page 6

... STD12NF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... L2 mm MAX. MIN. 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.3 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 0 STD12NF06 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 0068771-E 7/10 ...

Page 8

... STD12NF06 TO-252 (DPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A2 0.03 B 0.64 B2 5.2 C 0. 6.4 G 4 0.6 L2 8/10 mm TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 0 DETAIL "A" inch MIN. TYP. MAX. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.019 0.023 0.236 ...

Page 9

... STD12NF06 9/10 ...

Page 10

... STD12NF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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