FS1AS-18A Mitsubishi, FS1AS-18A Datasheet - Page 2

no-image

FS1AS-18A

Manufacturer Part Number
FS1AS-18A
Description
HIGH-SPEED SWITCHING USE
Manufacturer
Mitsubishi
Datasheet
ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
V
I
I
V
r
V
C
C
C
t
t
t
t
V
R
GSS
DSS
d (on)
r
d (off)
f
Symbol
DS (ON)
y
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
(BR) GSS
fs
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
100
2.0
1.6
1.2
0.8
0.4
80
60
40
20
POWER DISSIPATION DERATING CURVE
0
0
0
0
DRAIN-SOURCE VOLTAGE V
T
Pulse Test
C
CASE TEMPERATURE T
= 25°C
OUTPUT CHARACTERISTICS
Parameter
10
50
(TYPICAL)
20
100
V
GS
= 20V
30
(Tch = 25°C)
10V
I
I
V
V
I
I
I
I
V
V
R
I
Channel to case
D
GS
D
D
D
D
S
150
GS
DS
DS
DD
GEN
= 0.5A, V
P
= 1mA, V
= 1mA, V
= 0.5A, V
= 0.5A, V
= 0.5A, V
C
D
40
= ±100 A, V
= 900V, V
= 25V, V
= ±25V, V
= 200V, I
= 55W
(°C)
= R
DS
4.5V
(V)
GS
5V
4V
200
GS
GS
GS
GS
DS
DS
50
GS
= 50
D
DS
GS
= 0V
= 10V
= 10V
= 10V
= 10V
= 0V
= 0.5A, V
= 0V, f = 1MHz
DS
= 0V
= 0V
= 0V
Test conditions
GS
= 10V,
10
10
10
10
1.0
0.8
0.6
0.4
0.2
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
0
1
0
10
0
MAXIMUM SAFE OPERATING AREA
0
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
T
Single Pulse
C
2
OUTPUT CHARACTERISTICS
= 25°C
3 5 7
4
MITSUBISHI Nch POWER MOSFET
10
V
GS
1
(TYPICAL)
8
HIGH-SPEED SWITCHING USE
= 20V
2
3 5 7
Min.
900
±30
0.6
10V
2
5V
12
@
10
2
T
Pulse Test
2
Limits
C
4.5V
16
11.5
5.75
Typ.
270
1.0
1.0
26
12
35
30
= 25°C
4V
3 5 7
FS1AS-18A
3
4
9
DS
DS
(V)
(V)
10
20
tw = 100ms
1ms
10ms
100ms
DC
Max.
15.0
7.50
2.27
3
±10
1.5
1
4
Feb.1999
°C/W
Unit
mA
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
S
V
A

Related parts for FS1AS-18A