SUD50N06-12 Vishay, SUD50N06-12 Datasheet
SUD50N06-12
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SUD50N06-12 Summary of contents
Page 1
... DS DS(on) 60 0.012 @ TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N06-12 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage b b Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...
Page 2
... SUD50N06-12 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance ...
Page 3
... S-31920—Rev. A, 15-Sep-03 New Product 100 0.016 25_C 0.012 125_C 0.008 0.004 0.000 iss SUD50N06-12 Vishay Siliconix www.DataSheet4U.com Transfer Characteristics 125_C C 20 25_C Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current ...
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... SUD50N06-12 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.4 2.0 1.6 1.2 0.8 0 Junction Temperature (_C) J THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 80 Limited by Package 100 T - Case Temperature (_C) C Normalized Thermal Transient Impedance, Junction-to-Ambient ...
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... THERMAL RATINGS 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0. Document Number: 72385 S-31920—Rev. A, 15-Sep-03 New Product Normalized Thermal Transient Impedance, Junction-to-Case -2 10 Square Wave Pulse Duration (sec) SUD50N06-12 Vishay Siliconix www.DataSheet4U.com - www.vishay.com 5 ...