SI4834BDY Vishay Siliconix, SI4834BDY Datasheet - Page 4

• Manufacturer Part Number: SI4834BDY
• Description: Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
• Manufacturer: Vishay Siliconix

www.vishay.com
4
Si4834BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.1
20
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
SD
0
= 150_C
T
Threshold Voltage
- Source-to-Drain Voltage (V)
0.4
J
- Temperature (_C)
25
0.6
50
I
D
= 250 mA
75
0.8
T
100
J
1000
= 25_C
by r
100
0.1
Limited
10
1
1.0
0.1
DS(on)
125
Safe Operating Area, Junction-to-Foot
150
1.2
V
DS
Single Pulse
T
- Drain-to-Source Voltage (V)
C
1
= 25_C
10
0.06
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
0
10
0
-3
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
dc
2
100
10
V
GS
-2
- Gate-to-Source Voltage (V)
Time (sec)
4
I
D
= 7.5 A
10
-1
S-31062—Rev. B, 26-May-03
6
Document Number: 72064
1
MOSFET
8
10
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