SI4830CDY Vishay Siliconix, SI4830CDY Datasheet

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SI4830CDY

Manufacturer Part Number
SI4830CDY
Description
Dual N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4830CDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4830CDY-T1-GE3
Manufacturer:
FAIRCHILD
Quantity:
250
Part Number:
SI4830CDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
www.DataSheet.co.kr
Ordering Information: Si4830CDY-T1-E3 (Lead (Pb)-free)
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W (Channel-1) and 110 °C/W (Channel-2).
e. Package limited.
Document Number: 68884
S09-2109-Rev. B, 12-Oct-09
Channel-1
Channel-2
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
THERMAL RESISTANCE RATINGS
S
V
1
DS
G
G
/D
S
30
1
2
2
2
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
1
2
3
4
V
C
DS
= 25 °C.
30
30
(V)
Top View
Si4830CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
SO-8
Diode Forward Voltage
0.025 at V
0.025 at V
0.020 at V
0.020 at V
0.51 V at 1.0 A
R
DS(on)
V
J
SD
= 150 °C)
b, d
8
7
6
5
GS
GS
GS
GS
(V)
(Ω)
= 4.5 V
= 4.5 V
= 10 V
= 10 V
D
D
S
S
1
1
1
1
/D
/D
2
2
I
D
(A)
8.0
8.0
8.0
8.0
a, e
A
= 25 °C, unless otherwise noted
I
F
Q
Steady State
2.0
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(A)
g
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
7.3
7.3
(Typ.)
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
a
FEATURES
APPLICATIONS
G
• Halogen-free According to IEC 61249-2-21
• LITTLE FOOT
• PWM Optimized
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• Notebook Logic dc-to-dc
• Low Current dc-to-dc
Symbol
Symbol
1
T
R
R
J
V
V
E
I
I
Definition
I
P
, T
DM
I
I
SM
thJA
thJF
N-Channel MOSFET
AS
GS
DS
AS
D
S
D
stg
D
S
g
1
1
Tested
Typ.
52
35
Channel-1
Channel-1
7.5
5.8
1.8
1.2
®
± 20
8.0
2
7.1
2.6
2.9
1.8
30
30
30
10
b, c
Plus Schottky
5
b, c
b, c
b, c
b, c
e
Max.
62.5
43
- 55 to 150
G
2
Typ.
N-Channel MOSFET
52
35
Channel-2
Channel-2
7.5
5.8
1.8
1.2
± 20
8.0
2
Vishay Siliconix
7.1
2.6
2.9
1.8
30
30
30
10
b, c
5
b, c
b, c
b, c
b, c
e
D
S
Si4830CDY
Max.
62.5
2
2
43
www.vishay.com
Schottky Diode
°C/W
Unit
Unit
mJ
°C
W
V
A
1
Datasheet pdf - http://www.DataSheet4U.net/

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SI4830CDY Summary of contents

Page 1

... Top View Ordering Information: Si4830CDY-T1-E3 (Lead (Pb)-free) Si4830CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current ...

Page 2

... Si4830CDY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance ...

Page 3

... GEN ° Channel dI/dt = 100 A/µ Channel dI/dt = 100 A/µ Si4830CDY Vishay Siliconix Typ. Min. Ch Ω Ω Ch Ω Ch Ω Ch Ch-2 9 Ch-1 17 ...

Page 4

... Si4830CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.024 0.022 V = 4.5 V 0.020 GS 0.018 V GS 0.016 0.014 Drain Current (A) D On-Resistance vs. Drain Current ...

Page 5

... Limited DS(on 0 °C A Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Ambient Si4830CDY Vishay Siliconix 0. 0.08 0.06 0.04 0.02 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 6

... Si4830CDY Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.5 2.8 2.1 1.4 0.7 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 7

... Single Pulse - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4830CDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 110 ° ...

Page 8

... Si4830CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.024 0.022 V = 4.5 V 0.020 GS 0.018 V GS 0.016 0.014 Drain Current (A) D On-Resistance vs. Drain Current ...

Page 9

... Limited DS(on 0 °C A Single Pulse BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si4830CDY Vishay Siliconix 0. 0.08 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 60 48 ...

Page 10

... Si4830CDY Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.5 2.8 2.1 1.4 0.7 0 Case Temperature (°C) C Power Derating, Junction-to-Foot * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...

Page 11

... Single Pulse - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4830CDY Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 110 ° ...

Page 12

... B 0.35 0.51 C 0.19 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27 BSC H 5.80 6.20 h 0.25 0.50 L 0.50 0.93 q 0° 8° S 0.44 0.64 Package Information Vishay Siliconix All Leads 0.101 mm q 0.004" INCHES Min Max 0.053 0.069 0.004 0.008 0.014 0.020 0.0075 0.010 0.189 0.196 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.020 0.020 0.037 0° ...

Page 13

... See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/ppg?72286), for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad ...

Page 14

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.022 0.050 (0.559) (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 15

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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