SI4434DY Vishay Siliconix, SI4434DY Datasheet - Page 2

• Manufacturer Part Number: SI4434DY
• Description: N-Channel 250-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

Si4434DY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
30
24
18
12
b
6
0
0
Parameter
a
a
2
V
DS
a
Output Characteristics
− Drain-to-Source Voltage (V)
a
a
J
4
= 25_C UNLESS OTHERWISE NOTED)
V
GS
6
= 10 thru 6 V
Symbol
V
r
r
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
)
8
5 V
New Product
10
V
V
I
D
DS
DS
^ 4.0 A, V
= 100 V, V
I
= 250 V, V
F
V
V
V
V
V
V
V
V
V
DS
DS
= 2.8 A, di/dt = 100 A/ms
I
DS
DS
GS
DD
DD
Test Condition
GS
S
DS
= 2.8 A, V
w 10 V, V
= 0 V, V
= V
= 250 V, V
= 6.0 V, I
= 100 V, R
= 100 V, R
= 10 V, I
= 15 V, I
GEN
GS
GS
GS
, I
GS
= 10 V, I
= 10 V, R
D
= 0 V, T
D
GS
GS
D
= 250 mA
D
GS
L
L
= "20 V
= 3.0 A
= 3.0 A
= 2.9 A
= 25 W
= 25 W
= 0 V
= 10 V
= 0 V
40
35
30
25
20
15
10
J
D
5
0
g
= 55_C
= 3.0 A
0
= 6 W
1
V
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
2
2.0
0.6
20
T
3
25_C
C
0.129
0.131
Typ
0.75
10.5
100
6.8
1.2
14
34
16
23
47
19
= 125_C
S-32556—Rev. B, 15-Dec-03
Document Number: 72562
4
"100
Max
0.155
0.162
150
4.0
1.2
1.8
15
50
25
35
70
30
1
−55_C
5
Unit
nA
mA
mA
nC
ns
W
W
W
V
A
S
V
6