SI4431 Fairchild Semiconductor, SI4431 Datasheet - Page 4

• Manufacturer Part Number: SI4431
• Description: P-Channel Logic Level PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
10
0.01
100
8
6
4
2
0
0.1
Figure 9. Maximum Safe Operating Area.
10
1
0
Figure 7. Gate Charge Characteristics.
0.1
I
0.001
D
R
0.01
= -7.2A
DS(ON)
SINGLE PULSE
0.1
R
0.0001
1
V
JA
T
GS
A
= 125
LIMIT
= 25
= -10V
o
o
D = 0.5
C
C/W
5
-V
0.2
DS
, DRAIN-SOURCE VOLTAGE (V)
0.1
Q
0.05
1
g
, GATE CHARGE (nC)
0.02
0.001
DC
0.01
10
10s
SINGLE PULSE
Figure 11. Transient Thermal Response Curve.
1s
V
DS
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
= -5V
10ms
10
1ms
100 s
0.01
15
-15V
-10V
100
20
0.1
t
1
, TIME (sec)
1500
1200
900
600
300
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
1
0.01
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
0.1
t
1
10
C
, TIME (sec)
ISS
C
1
10
OSS
P(pk)
C
10
Duty Cycle, D = t
RSS
T
R
SINGLE PULSE
R
J
R
JA
JA
- T
T
100
JA
A
= 125°C/W
(t) = r(t) + R
15
= 25°C
A
t
= 125
1
f = 1 MHz
V
= P * R
t
100
2
GS
= 0 V
Si4431DY Rev A
o
C/W
JA
1
(t)
JA
/ t
1000
2
20
1000