SI4362DY Vishay Siliconix, SI4362DY Datasheet

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SI4362DY

Manufacturer Part Number
SI4362DY
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 71628
S-40762—Rev. E, 19-Apr-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board, t v 10 sec
DS
30
30
(V)
Ordering Information: Si4362DY
G
S
S
S
J
J
0.0055 @ V
a
a
0.0045 @ V
= 150_C)
= 150_C)
1
2
3
4
Parameter
Parameter
r
Si4362DY-T1 (with Tape and Reel)
Si4362DY—E3 (Lead Free)
Si4362DY-T1—E3 (Lead Free with Tape and Reel)
DS(on)
Top View
a
a
GS
SO-8
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
a
8
7
6
5
a
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
T
T
T
T
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
20
19
(A)
Symbol
Symbol
T
R
R
V
V
J
I
P
P
, T
DM
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
G
FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
D 100% R
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
N-Channel MOSFET
Rectifier Operation
Typical
29
13
D
S
g
Tested
−55 to 150
Limits
"12
2.9
3.5
2.2
30
20
15
60
Maximum
Vishay Siliconix
a
35
16
Si4362DY
www.vishay.com
Unit
Unit
_C/W
_C/W
W
W
A
A
1

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SI4362DY Summary of contents

Page 1

... Top View Ordering Information: Si4362DY Si4362DY-T1 (with Tape and Reel) Si4362DY—E3 (Lead Free) Si4362DY-T1—E3 (Lead Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) ...

Page 2

... Si4362DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... S-40762—Rev. E, 19-Apr-04 8000 6000 4000 2000 40 50 1.6 1.4 1.2 1.0 0.8 0 0.025 0.020 0.015 0.010 T = 25_C J 0.005 0.000 0.8 1.0 1.2 Si4362DY Vishay Siliconix Capacitance C iss C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature −50 − ...

Page 4

... Si4362DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA D 0.2 −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot ...

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