SI4336DY Vishay Siliconix, SI4336DY Datasheet

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SI4336DY

Manufacturer Part Number
SI4336DY
Description
N-Channel 30-V (D-S) MOSFET
Manufacturer
Vishay Siliconix
Datasheet

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Notes
a.
Document Number: 72417
S-41795—Rev. B, 04-Oct-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
ti
0.00325 @ V
0.0042 @ V
t A bi
Ordering Information: Si4336DY
r
DS(on)
G
S
S
S
J
J
a
a
= 150_C)
= 150_C)
t
a
a
GS
1
2
3
4
GS
Parameter
Parameter
(W)
= 4.5 V
= 10 V
Top View
a
a
SO-8
N-Channel 30-V (D-S) MOSFET
Si4336DY-T1 (with Tape and Reel)
a
I
D
25
22
(A)
8
7
6
5
D
D
D
D
A
L = 0.1 mH
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
Q
T
T
T
T
t v 10 sec
A
A
A
A
g
= 25_C
= 70_C
= 25_C
= 70_C
(Typ)
36
36
Symbol
Symbol
T
R
R
R
V
V
J
I
I
P
P
, T
DM
I
I
I
AS
thJA
thJF
DS
GS
D
D
S
D
D
FEATURES
D Ultra Low On-Resistance Using High Density
D Q
D 100% R
APPLICATIONS
D Synchronous Buck Low-Side
D Synchronous Rectifier, POL
stg
TrenchFETr Gen II Power MOSFET Technology
− Notebook
− Server
− Workstation
g
Optimized
G
g
10 secs
N-Channel MOSFET
Typical
Tested
2.9
3.5
2.2
25
20
29
67
13
D
S
−55 to 150
"20
30
70
50
Steady State
Maximum
Vishay Siliconix
1.3
1.6
17
13
35
80
16
1
Si4336DY
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1

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SI4336DY Summary of contents

Page 1

... Top View Ordering Information: Si4336DY Si4336DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si4336DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... S-41795—Rev. B, 04-Oct-04 7000 6000 5000 4000 3000 2000 1000 0.015 0.012 0.009 0.006 T = 25_C J 0.003 0.000 0.8 1.0 1.2 Si4336DY Vishay Siliconix Capacitance C iss C oss C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 1.4 1.2 1.0 0.8 0.6 − ...

Page 4

... Si4336DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0 250 mA 0.2 D −0.0 −0.2 −0.4 −0.6 −0.8 −1.0 −50 − − Temperature (_C) J *Limited by r Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72417. Document Number: 72417 S-41795—Rev. B, 04-Oct-04 −2 − Square Wave Pulse Duration (sec) Si4336DY Vishay Siliconix 1 10 www.vishay.com 5 ...

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