SI4172DY Vishay Siliconix, SI4172DY Datasheet - Page 4

• Manufacturer Part Number: SI4172DY
• Description: N-Channel 30-V (D-S) MOSFET
• Manufacturer: Vishay Siliconix

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Si4172DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
J
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
75
I
D
0.8
= 250 µA
0.01
T
100
0.1
J
10
100
1
= 25 °C
0.1
1.0
Safe Operating Area, Junction-to-Ambient
* V
Limited by R
Single Pulse
125
T
GS
A
= 25 °C
> minimum V
V
1.2
150
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
at which R
BVDSS Limited
0.030
0.025
0.020
0.015
0.010
0.005
0.000
DS(on)
10
50
40
30
20
10
0
10
0
is specified
- 3
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100 µA
1 ms
10 ms
100 ms
1 s
10 s
DC
10
- 2
2
V
100
GS
- Gate-to-Source Voltage (V)
10
- 1
Time (s)
4
S-82665-Rev. A, 03-Nov-08
1
Document Number: 69000
6
10
T
T
J
J
= 25 °C
= 125 °C
8
100
600
10
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