2SK3499 Toshiba Semiconductor, 2SK3499 Datasheet
2SK3499
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2SK3499 Summary of contents
Page 1
... V DGR V ±30 V GSS 360 150 °C ch -55 to150 T °C stg Symbol Max Unit R 1.56 °C/W th (ch- 2SK3499 Unit: mm JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Circuit Configuration 2002-09-04 ...
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... DSF /dt = 100 A/ ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) 2 2SK3499 Min Typ. Max ¾ ¾ ±10 ±30 ¾ ¾ ¾ 100 ¾ 400 ¾ 2.0 ¾ 4.0 0.55 4.0 0.8 ¾ ...
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... Drain-source voltage Gate-source voltage V 5 Common source Tc = 25°C 3 Pulse test 1 0.5 0.3 0 0.5 3 2SK3499 I – Common source 6 25°C pulse test 5.75 5.5 5.25 5.0 4. – Common source Tc = 25°C pulse test ...
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... C oss rss 100 -80 -40 Dynamic input/output characteristics 500 20 16 400 V DS 300 12 8 200 4 100 200 4 2SK3499 - -0.4 -0.6 -0.8 -1.0 -1.2 ( Common source pulse test 120 160 Case temperature Tc (° ...
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... Pulse width t (S) w 500 400 300 200 100 Channel temperature (initial) Tch (°C) 1000 15 V -15 V Test circuit = 5. 2SK3499 – 100 125 150 B VDSS Wave form æ ö ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2SK3499 000707EAA 2002-09-04 ...