IRFB38N20D International Rectifier, IRFB38N20D Datasheet - Page 7

• Manufacturer Part Number: IRFB38N20D
• Description: Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A)
• Manufacturer: International Rectifier

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Re-Applied
Voltage
Reverse
Recovery
Current

‚
+
-
R
D.U.T
G
*
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 14. For N-Channel HEXFET
V
GS
= 5V for Logic Level Devices
P.W.
SD
DS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
Body Diode Forward
+
-
ƒ
dv/dt controlled by R
Driver same type as D.U.T.
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Ground Plane
Current Transformer
Low Stray Inductance
Low Leakage Inductance
IRFB/IRFS/IRFSL38N20D
®
D =
-
Power MOSFETs
G
Period
„
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
V
DD
*
7