BT151F-600 SemiWell Semiconductor, BT151F-600 Datasheet

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BT151F-600

Manufacturer Part Number
BT151F-600
Description
Silicon Controlled Rectifiers
Manufacturer
SemiWell Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BT151F-600
Manufacturer:
SEMIWE
Quantity:
572
www.DataSheet4U.com
Absolute Maximum Ratings
Silicon Controlled Rectifiers
Features
General Description
Standard gate triggering SCR is fully isolated package suitable for
the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection ,motor con-
trol circuit in power tool, inrush current limit circuit and heating
control system.
Oct, 2003. Rev. 0
Symbol
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
Low On-State Voltage (1.4V(Typ.)@ I
Isolation Voltage ( V
I
P
V
T(RMS)
V
I
T
I
I
P
V
di/dt
T(AV)
G(AV)
FGM
TSM
RGM
DRM
I
T
STG
GM
ISO
2
J
t
SemiWell
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Isolation Breakdown Voltage(R.M.S.)
Operating Junction Temperature
Storage Temperature
2
t
for Fusing
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
ISO
Semiconductor
Parameter
= 1500V AC )
T(RMS)
= 12 A )
( T
J
TM
= 25°C unless otherwise specified )
)
Half Sine Wave : T
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
A.C. 1 minute
Over any 20ms period
Condition
C
= 78 °C
Symbol
TO-220F
2. Anode
BT151F-600
Preliminary
1
- 40 ~ 125
- 40 ~ 150
Ratings
2 3
1500
600
120
0.5
7.6
12
72
50
5
2
5
3. Gate
1. Cathode
Units
A/
A
°C
°C
W
W
V
A
A
A
A
V
V
2
s
1/5

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BT151F-600 Summary of contents

Page 1

... T(RMS 1500V 25°C unless otherwise specified ) J Parameter Half Sine Wave : T 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms Over any 20ms period A.C. 1 minute Preliminary BT151F-600 Symbol 3. Gate ○ ○ 2. Anode 1. Cathode TO-220F Condition Ratings 600 = 78 °C 7 ...

Page 2

... BT151F-600 Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage ( Gate Trigger Current ( Gate Trigger Voltage ( Non-Trigger Gate Voltage (1) GD Critical Rate of Rise Off-State dv/dt Voltage I Holding Current H R Thermal Impedance th(j-c) R Thermal Impedance th(j-a) ※ Notes : 1. Pulse Width ≤ ...

Page 3

... Junction Temperature[ P (5W (0.5W) G(AV) (0.2V 2.0 2.5 3.0 3.5 50 100 150 o C] BT151F-600 Fig 2. Maximum Case Temperature 140 120 100 80 π π θ 40 360° 20 θ : Conduction Angl Average On-State Current [A] Fig 4. Thermal Response ...

Page 4

... BT151F-600 Fig 7. Typical Holding Current 10 1 0.1 -50 0 Junction Temperature[ 4/5 50 100 150 o C] Fig 8. Power Dissipation 15 θ = 120 12 o θ θ θ Average On-State Current [A] o θ = 180 ...

Page 5

... φ BT151F-600 Inch Min. Typ. Max. 0.409 0.417 0.243 0.254 0.376 0.386 0.530 0.540 0.238 0.242 0.050 0.054 0.125 0.135 0.074 0.084 0.101 0.111 0.100 0.200 0.099 0.103 0.049 0.061 0.018 0.025 0.024 0.039 0.146 ...

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