BT151B Philips Semiconductors, BT151B Datasheet - Page 3

• Manufacturer Part Number: BT151B
• Description: Thyristors
• Manufacturer: Philips Semiconductors

Philips Semiconductors
September 1997
Thyristors
15
10
Fig.1. Maximum on-state dissipation, P
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible rms current I
5
0
15
10
on-state current I
0
5
0
1000
-50
Ptot / W
100
IT(RMS) / A
conduction
angle
degrees
10
10us
versus mounting base temperature T
30
60
90
120
180
average on-state current, I
ITSM / A
1
I
T
Tj initial = 25 C max
dI /dt limit
sinusoidal currents, t
form
factor
T
a = form factor = I
a
4
2.8
2.2
1.9
1.57
T
2
0
I TSM
time
100us
3
TSM
4
IT(AV) / A
BT151
, versus pulse width t
Tmb / C
BT151
4
BT151
T / s
50
2.8
T(RMS)
5
p
1ms
2.2
T(AV)
/ I
10ms.
6
T(AV)
100
Tmb(max) / C
, where
1.9
109 C
.
a = 1.57
7
tot
, versus
mb
T(RMS)
p
10ms
, for
.
8
105.5
112
118.5
125
150
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
120
100
1.6
1.4
1.2
0.8
0.6
0.4
80
60
40
20
25
20
15
10
0
1
5
0
0.01
(T
-50
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
0.1
10
surge duration / s
, versus number of cycles, for
BT151
BT151
BT151
Tj / C
50
mb
I
T
Tj initial = 25 C max
BT151B series
100
Product specification
1
T
109˚C.
100
I TSM
time
Rev 1.100
1000
150
10
j
.