MCR100-8 DnI, MCR100-8 Datasheet

no-image

MCR100-8

Manufacturer Part Number
MCR100-8
Description
Standard Gate SCR
Manufacturer
DnI
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCR100-8
Manufacturer:
MOT
Quantity:
2 896
Part Number:
MCR100-8
Manufacturer:
MOT/ON
Quantity:
1 000
Part Number:
MCR100-8
Manufacturer:
ST
0
Part Number:
MCR100-8
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MCR100-8G
Manufacturer:
ON
Quantity:
15 000
Part Number:
MCR100-8G
Manufacturer:
ON Semiconductor
Quantity:
29 557
Part Number:
MCR100-8G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Part Number:
MCR100-8G
Manufacturer:
ON/安森美
Quantity:
20 000
www.DataSheet4U.com
Sensitive Gate
Silicon Controlled -
Rectifiers
Absolute Maximum Ratings
Features
General Description
Sensitive-gate triggering thyristor is suitable for the applica-
tion where gate current limited such as small motor control,
gate driver for large thyristor, sensing and detecting circuits.
April, 2005. Rev.0
Symbol
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
Low On-State Voltage (1.2V(Typ.)@ I
I
Pb - Free Packages are available
P
V
T(RMS)
V
I
T
I
I
P
T(AV)
G(AV)
FGM
TSM
RGM
DRM
I
T
STG
GM
2
J
t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
2
t
for Fusing
Parameter
copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
T(RMS)
= 1.0 A )
( T
J
TM
= 25°C unless otherwise specified )
)
1.Cathode
Symbol
half sine wave : T
180° Conduction Angle
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
t = 8.3ms
T
T
T
T
sine wave,50 to 60Hz,gate open
A
A
A
A
= 25 °C, pulse width ≤ 1.0
= 25 °C, t = 8.3ms
= 25 °C, pulse width ≤ 1.0
= 25 °C, pulse width ≤ 1.0
Condition
3. Anode
2.Gate
C
= 74 °C
TO-92
MCR100-8
I
BV
I
T(RMS)
TSM
1
- 40 ~ 125
- 40 ~ 150
Ratings
2
0.415
DRM
600
3
0.6
1.0
0.1
5.0
10
2
1
= 10 A
= 1.0 A
= 600V
Units
A
°C
°C
W
W
V
A
A
A
A
V
2
s
1/5

Related parts for MCR100-8

MCR100-8 Summary of contents

Page 1

... ° 8.3ms °C, pulse width ≤ 1 °C, pulse width ≤ 1 copyright @ D&I Semiconductor Co., Ltd., All rights reserved. MCR100-8 3. Anode ○ 600V DRM I = 1.0 A T(RMS ○ TSM 2.Gate ○ ...

Page 2

... MCR100-8 Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage ( Gate Trigger Current ( Gate Trigger Voltage ( Non-Trigger Gate Voltage (1) GD Critical Rate of Rise Off-State dv/dt Voltage Critical Rate of Rise On-State di/dt Current I Holding Current H R Thermal Impedance ...

Page 3

... Junction Temperature[ P (2W (0.1W) G(AV 1.5 2.0 2.5 50 100 150 o C] MCR100-8 Fig 2. Maximum Case Temperature 140 120 100 80 60 π π 2 θ ° 20 θ : Conduc t ion Angl e 0 0.0 0.1 0.2 0.3 0.4 Average On-State Current [A] Fig 4. Thermal Response ...

Page 4

... MCR100-8 Fig 7. Typical Holding Current 10 1 0.1 -50 0 Junction Temperature[ 4/5 50 100 150 o C] Fig 8. Power Dissipation 0.7 0.6 o θ = 120 o θ 0.5 o θ θ 0.4 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 Average On-State Current [A] o θ = 180 0.5 0.6 ...

Page 5

... TO-92 Package Dimension Dim Min. Typ. Max. 4.2 3.7 4.43 4.83 14.07 14.87 0.4 4.43 4.83 0.45 2.54 2.54 0.33 0. MCR100-8 Inch Min. Typ. Max. 0.165 0.146 0.174 0.190 0.554 0.585 0.016 0.174 0.190 0.017 0.100 0.100 0.013 0.019 1. Cathode 2. Gate 3. Anode J 5/5 ...

Related keywords