DDB-JJS-L1 Dominant Semiconductors, DDB-JJS-L1 Datasheet - Page 5

• Manufacturer Part Number: DDB-JJS-L1
• Description: LED GaN
• Manufacturer: Dominant Semiconductors

50°
60°
70°
80°
90°
40°
DOMINANT
Relative luminous intensity vs. forward current.
Radiation pattern.
Relative Intensity vs. Wavelength
15/03/05
30°
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2
1
0
400
0
20°
Intensity Vs Forward Current
5
450
Relative Spectral Emission
10°
Semiconductors
10
Forw ard Current (m A)
500
0°
Wavelength (nm)
15
0.8
0.6
0.4
0.2
0
1.0
White
Blue
550
DomiLED GaN DDx-xJx - Catalogue-v3.doc
20
600
25
30
650
35
700
Maximum forward current vs. temperature.
Forward current vs. forward voltage.
25
20
15
10
35
30
25
20
15
10
5
0
5
0
0
2.0
Forward Current (mA) vs. Forward Voltage
10
2.5
20
30
3.0
(GaN:Blue)
Forward Voltage (V)
A m bient Tem perature
40
3.5
50
60
4.0
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70
80
4.5
90
5.0
100