MMBT5401-G Comchip Technology Corporation, MMBT5401-G Datasheet
MMBT5401-G
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MMBT5401-G Summary of contents
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... General Purpose Transistor General Purpose Transistor MMBT5401-G RoHS Device Features -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. Diagram: Collector 1 Base Emitter Marking: 2L Maximum Ratings (at Ta=25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current - continuous ...
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... General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT5401-G) Fig.1 Max Power Dissipation vs. Ambient Temperature 400 350 300 250 200 150 100 100 Ta, Ambient Temperature ( Fig.3 DC Current Gain vs. Collector Current 10000 V =5V CE 1000 O T =150 C a 100 ...
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General Purpose Transistor Reel Taping Specification Trailer End ....... 10 pitches (min) A SYMBOL (mm) SOT-23 3.10 ± 0.10 (inch) ± 0.122 0.004 E SYMBOL (mm) SOT-23 1.75 ± 0.10 (inch) ± 0.069 0.004 QW-BTR18 ...
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... General Purpose Transistor Marking Code Marking Code Part Number 2L MMBT5401-G Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 Standard Package Qty per Reel Reel Size Case Type (Pcs) (inch) SOT-23 3000 QW-BTR18 Comchip Technology CO., LTD. COMCHIP SMD Diodes Specialist ...