MAC97 ON Semiconductor, MAC97 Datasheet - Page 2

• Manufacturer Part Number: MAC97
• Description: Sensitive Gate Triacs Silicon Bidirectional Thyristors
• Manufacturer: ON Semiconductor

THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes for 10 Seconds
Peak Repetitive Blocking Current
(V
Peak On−State Voltage
(I
Gate Trigger Current (Continuous dc)
(V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (Continuous dc)
(V
MT2(+), G(+) All Types
MT2(+), G(−) All Types
MT2(−), G(−) All Types
MT2(−), G(+) All Types
Gate Non−Trigger Voltage
(V
All Four Quadrants
Holding Current
(V
Turn-On Time
(V
Critical Rate−of−Rise of Commutation Voltage
(V
Commutating di/dt = .3 A/ms, Gate Unenergized, T
Critical Rate of Rise of Off−State Voltage
(V
TM
D
D
D
D
D
D
D
D
= Rated V
= 12 Vdc, R
= 12 Vdc, R
= 12 V, R
= 12 Vdc, Initiating Current = 200 mA, Gate Open)
= Rated V
= Rated V
= Rated V
= ".85 A Peak; Pulse Width v 2.0 ms, Duty Cycle v 2.0%)
L
DRM
DRM
DRM
DRM
= 100 W, T
L
L
= 100 W)
= 100 W)
, V
, I
, I
, T
TM
TM
C
RRM
= 110°C, Gate Open, Exponential Waveform
= 1.0 A pk, I
= .84 A,
; Gate Open)
J
= 110°C)
Characteristic
Characteristic
G
= 25 mA)
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
C
= 50°C)
http://onsemi.com
MAC97 Series
2
T
J
T
= +110°C
J
= 25°C
I
DRM
Symbol
Symbol
dV/dt(c)
R
dv/dt
R
V
V
V
I
T
t
GT
I
qJC
qJA
, I
GD
TM
GT
gt
H
L
RRM
Min
0.1
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
Typ
200
260
.66
.77
.84
.88
1.5
2.0
5.0
75
25
−
−
−
−
−
−
−
−
Max
100
1.9
5.0
5.0
5.0
7.0
2.0
2.0
2.0
2.5
10
10
−
−
−
−
°C/W
°C/W
V/ms
V/ms
Unit
Unit
mA
mA
°C
mA
mA
ms
V
V
V