BCR 129TE6433 Infineon Technologies, BCR 129TE6433 Datasheet
BCR 129TE6433
Related parts for BCR 129TE6433
BCR 129TE6433 Summary of contents
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... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =10k ) 1 For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR129/F/L3 BCR129S BCR129T/W SEMH4 TR1 ...
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Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipation- BCR129, T 102°C S BCR129F, T 128°C S BCR129L3, T 135°C S BCR129S, T 115°C S BCR129T, T 109°C S BCR129W, T 124°C ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Emitter-base breakdown voltage µ ...
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DC current gain (common emitter configuration Input on Voltage (on 0.3V (common emitter configuration) CE ...
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Total power dissipation P 300 mW 200 150 100 Total power dissipation P BCR129L3 300 mW 200 150 100 Total power dissipation P ...
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Total power dissipation P BCR129T 300 mW 200 150 100 Total power dissipation P SEMH4 300 mW 200 150 100 Total power dissipation ...
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Permissible Pulse Load R BCR129 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS BCR129F ...
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Permissible Puls Load R thJS BCR129L3 Permissible Puls Load R thJS BCR129S 0.5 0.2 0.1 0.05 ...
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Permissible Puls Load R thJS BCR129T D=0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS BCR129W 3 ...
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Permissible Puls Load R thJS SEMH4 Permissible Pulse Load p P totmax SEMH4 ...