BCR 119SE6433 Infineon Technologies, BCR 119SE6433 Datasheet
BCR 119SE6433
Related parts for BCR 119SE6433
BCR 119SE6433 Summary of contents
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... NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R =4. For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR119/F/L3 BCR119S BCR119T/W SEMH7 TR1 ...
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Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage DC collector current Total power dissipation- BCR119, T 102°C S BCR119F, T 128°C S BCR119L3, T 135°C S BCR119S, T 115°C S BCR119T, T 109°C S BCR119W, T ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Emitter-base breakdown voltage µ ...
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DC current gain (common emitter configuration Input on Voltage (on 0.3V ...
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Total power dissipation P BCR119 300 mW 200 150 100 Total power dissipation P BCR119L3 300 mW 200 150 100 Total power dissipation ...
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Total power dissipation P BCR119T 300 mW 200 150 100 Total power dissipation P SEMH7 300 mW 200 150 100 Total power dissipation ...
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Permissible Pulse Load R BCR119 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS BCR119F ...
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Permissible Puls Load R thJS BCR119L3 Permissible Puls Load R thJS BCR119S 0.5 0.2 0.1 0.05 ...
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Permissible Puls Load R thJS BCR119T D=0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS BCR119W 3 ...
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Permissible Puls Load R thJS SEMH7 Permissible Pulse Load p P totmax SEMH7 ...