2SC6026 Toshiba Semiconductor, 2SC6026 Datasheet
2SC6026
Manufacturer Part Number
2SC6026
Description
Silicon NPN Epitaxial Type (PCT Process) General-Purpose Amplifier Applications
Manufacturer
Toshiba Semiconductor
Datasheet
1.2SC6026.pdf
(3 pages)
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General-Purpose Amplifier Applications
•
•
•
•
•
Maximum Ratings
Electrical Characteristics
Marking
High voltage and high current
Excellent h
High h
Complementary to 2SA2154
Lead (Pb) free
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Note: h
FE
( ) marking symbol
FE
7F
FE
Characteristic
Characteristic
classification Y (F): 120~240, GR (H): 200~400
linearity : h
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Type Name
h
: V
FE
(Ta = 25°C)
:
h
CEO
FE
Rank
FE
= 120~400
(I
= 50 V, I
C
= 0.1 mA)/h
(Ta = 25°C)
h
V
FE
C
Symbol
Symbol
V
V
V
CE (sat)
I
I
= 100 mA (max)
T
C
CBO
EBO
P
CBO
CEO
EBO
I
I
T
(Note)
f
stg
C
B
T
ob
C
j
2SC6026
FE
(I
C
V
V
V
I
V
V
C
= 2 mA) = 0.95 (typ.)
CB
EB
CE
CE
CB
= 100 mA, I
−55~150
Rating
= 5 V, I
= 60 V, I
= 6 V, I
= 10 V, I
= 10 V, I
100
150
60
50
30
50
5
1
C
C
Test Condition
E
C
E
= 0
= 2 mA
B
= 0
= 0, f = 1 MHz
= 1 mA
= 10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.0006 g (typ.)
JEDEC
JEITA
TOSHIBA
fSM
Min
120
⎯
⎯
⎯
60
⎯
1
2
0.1±0.05
Typ.
0.95
0.8±0.05
0.1
1.0±0.05
⎯
⎯
⎯
⎯
1.BASE
2.EMITTER
3.COLLECTOR
2-1E1A
2005-03-23
2SC6026
―
―
Max
0.25
400
0.1
0.1
⎯
⎯
3
Unit: mm
0.1±0.05
MHz
Unit
µA
µA
pF
⎯
V
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